Patents Assigned to Stanley Electric Co., Ltd., Tokyo Denpa Co., Ltd., and Tohoku University
  • Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
    Patent number: 7438762
    Abstract: A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: October 21, 2008
    Assignee: Stanley Electric Co., Ltd., Tokyo Denpa Co., Ltd., and Tohoku University
    Inventors: Hiroyuki Kato, Michihiro Sano, Katsumi Maeda, Hiroshi Yoneyama, Takafumi Yao, Meoung Whan Cho