Abstract: An amplifier stage capable of delivering a peak limited voltage pulse with sharp transitions, at a desired width and duty cycle, and with high efficiency is disclosed. One disclosed embodiment relates to a circuit that includes a tuned class D amplifier that receives an input signal and generates a pulsed RF output signal in response to the input signal. The pulsed RF output signal has a greater power than that of the input signal.

Abstract: An amplifier stage capable of delivering a peak limited voltage pulse with sharp transitions, at a desired width and duty cycle, and with high efficiency is disclosed. One disclosed embodiment relates to a circuit that includes a tuned class D amplifier that receives an input signal and generates a pulsed RF output signal in response to the input signal. The pulsed RF output signal has a greater power than that of the input signal.

Abstract: Systems and methods for switching electronic signals are disclosed. The switching may be performed with a low loss and low peak voltages. The switching scheme is suitable for switching RF signals, for example, and may be used in devices such as wireless systems, terminals, and handsets. One exemplary embodiment is directed to a CMOS-implemented transmit/receive switching system. The system comprises one or more transmit ports, each coupled via a respective transmit path to an input/output port and one or more receive ports, each coupled via a respective receive path to the input/output port. Each receive path comprises a switching circuit comprising a transistor and an inductor in parallel with the transistor. The switching circuit is adapted to at least substantially isolate the respective receive port from the input/output port when the transistor is in an on state and operatively couple the respective receive port to the input/output port when the transistor is an off state.

Abstract: Exemplary techniques for implementing an amplifier suitable for RF amplification, such as a tuned class DE amplifier, are disclosed. One disclosed embodiment of a circuit for amplifying an RF signal includes a push-pull amplifier comprising a push transistor and a pull transistor. A first driver amplifier drives the push transistor of the push-pull amplifier with a first RF signal. A second driver amplifier drives the pull transistor of the push-pull amplifier with a second RF signal different from the first RF signal.

Abstract: Exemplary techniques for implementing an amplifier suitable for RF amplification, such as a tuned class DE amplifier, are disclosed. One disclosed embodiment of a circuit for amplifying an RF signal includes a push-pull amplifier comprising a push transistor and a pull transistor. A first driver amplifier drives the push transistor of the push-pull amplifier with a first RF signal. A second driver amplifier drives the pull transistor of the push-pull amplifier with a second RF signal different from the first RF signal.

Abstract: Impedance matching techniques can be used to match an amplifier to an antenna for signal transmission. Some impedance matching techniques use an integrated passive component and an integrated transformer. Some impedance matching techniques include the use of an integrated n:m transformer, where n?m. Several n:m transformer implementations are described.

Abstract: Impedance matching techniques can be used to match an amplifier to an antenna for signal transmission. Some impedance matching techniques use an integrated passive component and an integrated transformer. Some impedance matching techniques include the use of an integrated n:m transformer, where n?m. Several n:m transformer implementations are described.

Abstract: Exemplary techniques for implementing an amplifier suitable for RF amplification, such as a tuned class DE amplifier, are disclosed. One disclosed embodiment of a circuit for amplifying an RF signal includes a push-pull amplifier comprising a push transistor and a pull transistor. A first driver amplifier drives the push transistor of the push-pull amplifier with a first RF signal. A second driver amplifier drives the pull transistor of the push-pull amplifier with a second RF signal different from the first RF signal.

Abstract: An amplifier stage capable of delivering a peak limited voltage pulse with sharp transitions, at a desired width and duty cycle, and with high efficiency is disclosed. One disclosed embodiment relates to a circuit that includes a tuned class D amplifier that receives an input signal and generates a pulsed RF output signal in response to the input signal. The pulsed RF output signal has a greater power than that of the input signal.

Abstract: Systems and methods for switching electronic signals are disclosed. The switching may be performed with a low loss and low peak voltages. The switching scheme is suitable for switching RF signals, for example, and may be used in devices such as wireless systems, terminals, and handsets. One exemplary embodiment is directed to a CMOS-implemented transmit/receive switching system. The system comprises one or more transmit ports, each coupled via a respective transmit path to an input/output port and one or more receive ports, each coupled via a respective receive path to the input/output port. Each receive path comprises a switching circuit comprising a transistor and an inductor in parallel with the transistor. The switching circuit is adapted to at least substantially isolate the respective receive port from the input/output port when the transistor is in an on state and operatively couple the respective receive port to the input/output port when the transistor is an off state.

Abstract: An amplifier stage capable of delivering a peak limited voltage pulse with sharp transitions, at a desired width and duty cycle, and with high efficiency is disclosed. One disclosed embodiment relates to a circuit that includes a tuned class D amplifier that receives an input signal and generates a pulsed RF output signal in response to the input signal. The pulsed RF output signal has a greater power than that of the input signal.

Abstract: Exemplary techniques for implementing an amplifier suitable for RF amplification, such as a tuned class DE amplifier, are disclosed. One disclosed embodiment of a circuit for amplifying an RF signal includes a push-pull amplifier comprising a push transistor and a pull transistor. A first driver amplifier drives the push transistor of the push-pull amplifier with a first RF signal. A second driver amplifier drives the pull transistor of the push-pull amplifier with a second RF signal different from the first RF signal.