Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Abstract: The present invention provides a multi-tip array device comprising: a substrate; a multi-tip array of atomic tips on the substrate, the multi-tip array having a pitch of 0.94 to 5.4 nm between adjacent tips in at least one direction; and means for moving the substrate. The present invention also provides an atomic claw comprising: a mounting block; a paddle having a multi-tip array thereon, the multi-tip array having a pitch of 0.94 to 5.4 nm between adjacent tips in at least one direction; and a cantilever connected to the paddle and the mounting block, wherein the cantilever allows the paddle to be moved in at least one arcuate direction.

Abstract: The present invention provides a method for producing atomic ridges on a substrate comprising: depositing a first metal on a substrate; heating the substrate to form initial nanowires of the first metal on the substrate; depositing a second metal on the initial nanowires of the first metal to form thickened nanowires that are more resistant to etching than the initial nanowires; and etching the substrate to form atomic ridges separated by grooves having a pitch of 0.94 to 5.35 nm. The present invention also provides a method for forming Au and other metal nanowires that may be used for electrical conductors and both positive and negative etch masks to form a plurality of ridges at a pitch of 0.94 to 5.35 nm containing at least two adjacent grooves with widths of 0.63 to 5.04 nm.