Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.
Type:
Grant
Filed:
October 15, 1998
Date of Patent:
August 22, 2000
Assignee:
Starmet Corp
Inventors:
Matthew D. Stephens, Steven A. Miller, Jessica Belcher
Abstract: A method for producing uranium oxide includes combining uranium tetrafluoride and a solid oxidizing agent having a lower thermodynamic stability than the uranium oxide; heating the combination below the vapor point of the uranium tetrafluoride to sufficiently react the uranium tetrafluoride and the oxidizing agent to produce uranium oxide and a non-radioactive fluorine compound; and removing the fluorine compound.
Abstract: A method for producing silicon tetrafluoride includes combining uranium tetrafluoride and silicon dioxide; heating the combination below the melting point of the uranium tetrafluoride to sufficiently react the uranium tetrafluoride and the silicon dioxide to produce non-radioactive silicon tetrafluoride and an oxide of uranium; and removing the silicon tetrafluoride.