Abstract: The invention discloses a novel packaging structure of a power semiconductor module, which mainly comprises an insulating radiating fin, a metal lead frame unit and a chip unit. The insulating radiating fin comprises an insulating layer, and an inner metal conducting layer and an outer metal conducting layer which are respectively arranged on two sides of the insulating layer; the metal lead frame unit mainly comprises a frame pin input portion, a frame pin output portion and a frame pin signal portion, the frame pin input portion is arranged on an upper side of the inner metal conducting layer in a solder welding mode, and the chip unit is welded to the middle of the inner metal conductive layer. The frame pin output portion is provided with an inner concave portion.