Patents Assigned to Startec Ventures, Inc.
  • On-site ammonia purification for semiconductor manufacture
    Patent number: 5846386
    Abstract: Highly purified ammonia for use in semiconductor manufacturing is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.
    Type: Grant
    Filed: July 1, 1996
    Date of Patent: December 8, 1998
    Assignee: Startec Ventures, Inc.
    Inventors: Joe G. Hoffman, R. Scott Clark
  • On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
    Patent number: 5785820
    Abstract: A system for purification and generation of hydrofluoric acid on-site at a semiconductor device fabrication facility. An evaporation stage (optionally with arsenic oxidation) is followed by a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
    Type: Grant
    Filed: July 1, 1996
    Date of Patent: July 28, 1998
    Assignee: Startec Ventures, Inc.
    Inventors: Joe G. Hoffman, R. Scot Clark
  • Point-of-use ammonia purification for electronic component manufacture
    Patent number: 5755934
    Abstract: Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.
    Type: Grant
    Filed: March 4, 1996
    Date of Patent: May 26, 1998
    Assignee: Startec Ventures, Inc.
    Inventors: Joe G. Hoffman, R. Scot Clark
  • On-site generation of ultra-high-purity buffered-HF for semiconductor processing
    Patent number: 5722442
    Abstract: A process for preparing ultra-high-purity buffered hydrofluoric acid on-site at a semiconductor manufacturing facility (front end). Anhydrous ammonia is purified by scrubbing in a high-pH liquor, and then combined with high-purity aqueous HF which has been purified by a similar process. The generation is monitored by a density measurement to produce an acid whose pH and buffering are accurately controlled.
    Type: Grant
    Filed: July 1, 1996
    Date of Patent: March 3, 1998
    Assignee: Startec Ventures, Inc.
    Inventors: Joe G. Hoffman, R. Scot Clark
  • Point-of-use ammonia purification for electronic component manufacture
    Patent number: 5496778
    Abstract: Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.
    Type: Grant
    Filed: January 7, 1994
    Date of Patent: March 5, 1996
    Assignee: Startec Ventures, Inc.
    Inventors: Joe G. Hoffman, R. Scot Clark
  • Manufacture of high precision electronic components with ultra-high purity liquids
    Patent number: 5242468
    Abstract: Semiconductor wafers and other electronic parts which similarly require ultra-high purity manufacturing environments are treated with ultra-high purity liquid cleaning and etching agents prepared at the site of use from gaseous raw materials which have been purified to a level compatible with semiconductor manufacturing standards, combined when appropriate with ultra-pure water.
    Type: Grant
    Filed: March 19, 1991
    Date of Patent: September 7, 1993
    Assignee: Startec Ventures, Inc.
    Inventors: R. Scot Clark, Stephen S. Baird, Joe G. Hoffman