Patents Assigned to Stathera IP Holding, Inc.
  • Patent number: 12338119
    Abstract: An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The resonator body is operable in an in-plane mode of vibration and an out-of-plane mode of vibration.
    Type: Grant
    Filed: March 18, 2024
    Date of Patent: June 24, 2025
    Assignee: Stathera IP Holdings Inc.
    Inventors: George Xereas, Vahid Tayari, Ahmed Khorshid, Charles Allan
  • Patent number: 12155384
    Abstract: A system for reference clock frequency correction is described. The system comprises a compensation module configured to (i) receive, as input, an oscillator signal and one or more control signals, (ii) generate a compensation signal based on the oscillator signal and the one or more control signals, wherein the generated compensation signal is a discretized sinusoidal signal having a controllable frequency, and (iii) output the generated compensation signal. The system further comprises a mixer block configured to (i) receive, as input, the generated compensation signal and the oscillator signal, and (ii) generate an output clock signal by mixing the generated compensation signal with the oscillator signal. A soft-switching method to reduce the effect of quantization noise is further described.
    Type: Grant
    Filed: April 13, 2023
    Date of Patent: November 26, 2024
    Assignee: Stathera IP Holding, Inc.
    Inventors: Nikola Katic, Javid Musayev
  • Patent number: 12081192
    Abstract: A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.
    Type: Grant
    Filed: May 26, 2023
    Date of Patent: September 3, 2024
    Assignee: Stathera IP Holdings, Inc.
    Inventors: Vamsy P. Chodavarapu, George Xereas
  • Patent number: 12071342
    Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: August 27, 2024
    Assignee: Stathera IP Holding, Inc.
    Inventors: Vamsy Chodavarapu, George Xereas
  • Patent number: 11932530
    Abstract: An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.
    Type: Grant
    Filed: February 6, 2023
    Date of Patent: March 19, 2024
    Assignee: Stathera IP Holdings Inc.
    Inventors: George Xereas, Vahid Tayari, Ahmed Khorshid, Charles Allan
  • Patent number: 11664781
    Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: May 30, 2023
    Assignee: Stathera IP Holdings Inc.
    Inventors: Vamsy Chodavarapu, George Xereas
  • Patent number: 11584635
    Abstract: A dual-output microelectromechanical system (MEMS) resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain, respectively, a first electrical signal having a first frequency and a second electrical signal having a second frequency that is less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. Also described herein are methods and systems for determining the temperature of the dual-output MEMS and for performing frequency compensation, as well as a method of manufacturing the dual-output MEMS.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: February 21, 2023
    Assignee: Stathera IP Holdings Inc.
    Inventors: George Xereas, Vahid Tayari, Ahmed Khorshid, Charles Allan
  • Patent number: 11479460
    Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: October 25, 2022
    Assignee: Stathera IP Holdings Inc.
    Inventors: Vamsy Chodavarapu, George Xereas