Abstract: The present invention is directed to an apparatus and process for heat treating wafers, such as semiconductor wafers, in thermal processing chambers. In particular, the apparatus of the present invention includes an electrical heating element positioned along the edges of a wafer contained in the thermal processing chamber. The electrical heating element which can be made, for instance, from silicon, silicon carbide or graphite, radiates heat towards the edges of the wafer during processing. The heating element is designed to compensate for heat losses that occur at the wafer's edge.

Abstract: A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.

Abstract: A plurality of substrates is closely stacked together in a Rapid Thermal Processing (RTP) chamber, and the stack is processed simultaneously.