Abstract: In order to achieve temperature distribution, in particular a homogeneous temperature distribution in, for example, a substrate during a thermal treatment process of said substrate, a method is disclosed for the thermal treatment of substrates, in particular semi-conductor wafers, in a process chamber comprising at least one temperature distribution influencing element located in the process chamber. During thermal treatment, the spatial arrangement of the element is altered relative to the substrate and/or to the process chamber. A device for the thermal treatment of substrates in a process chamber is also disclosed, comprising at least one temperature distribution influencing element located in a process chamber wherein a device is provided in order to alter the spatial arrangement of the element relative to the substrate and/or to the process chamber during the thermal treatment process.

Abstract: The invention relates to a simple and cost-effective method for aligning substrates. In order to achieve this, the invention provides a device for aligning disc-shaped substrates, in particular semiconductor wafers, comprising an alignment detection unit, at least one first support for receiving the substrate, which forms an oblique plane in relation to the horizontal, a stop against which the substrate can be displaced as a result of the oblique angle and a rotational device for rotating the substrate.

Abstract: The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Abstract: The invention relates to a device for measuring the temperature of substrates, notably semiconductor wafers. The device comprises at least one radiation sensor for measuring the radiation emitted by the substrate and an element (19) which restricts the field of vision of the radiation sensor and is positioned between the substrate and the radiation sensor. The substrate temperature can be determined correctly and simply, even if the substrate vibrates or is tilting, owing to the fact that the edges (20) of the element extend in a straight line. The invention also relates to a corresponding method.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

Abstract: A method of formally treating at least one layer for activating foreign atoms passivated in the layer by hydrogen is provided. The at least one layer is heated, in a first time interval of less than 120 seconds, above a first temperature at which a specific sheet resistance of the at least one layer decreases. The at least one layer is heated, in a second time interval which is within the first time interval and is less than 60 seconds, to above a decomposition temperature of the layer. Charge carriers are produced in the at least one layer during at least one third time interval, by electromagnetic radiation, wherein the energy of such electromagnetic radiation is greater than an energy gap of the at least one layer.

Abstract: The aim of the invention is to provide an economical and homogenous thermal treatment for substrate. To this end, the inventive device and method for thermally treating substrates, especially semiconductor wafers, comprise at least one heating device for heating at least one substrate by electromagnetic radiation. Said heating device comprises at least two arc lamps, the radiation characteristics for each arc lamp being controlled individually, and the electromagnetic radiation of the arc lamps contributing essentially to the power density of the electromagnetic radiation of the heating device.

Abstract: A method and apparatus for calibrating temperature measurements that are taken with a first radiation detector for measuring thermal radiation given off by a reference substrate are provided. The method includes the steps of heating the reference substrate, which carries at least one reference material having a known melting point temperature, to or over the melting point temperature and measuring the thermal radiation of the reference substrate during the heating step, during a cooling period that follows the heating, or during both the heating and the cooling periods. The method also includes the step of correlating a measurement plateau of the thermal radiation which occurs during the measuring step with the known melting point temperature.

Abstract: An apparatus for the thermal treatment of substrates is provided. The apparatus includes a reaction chamber, at least one elongated heat source, and at least one reflection wall that is disposed adjacent to the heat source and serves to reflect at least a portion of the radiation given off thereby. The reflection wall has at least one rib, and the heat source is disposed at an oblique angle to the longitudinal direction of the rib.

Abstract: A method for rapid thermal processing (RTP) of a silicon substrate, the substrate having a surface with a plurality of areas implanted with dopant ions, comprising a) contacting the surface with a reactive gas, b) processing the substrate for a first process time and temperature sufficient to produce a significant protective layer upon the surface, and c) annealing the substrate for a second process time and temperature sufficient to activate the dopant material so that the sheet resistivity of the implanted areas is less than 500 ohms/square, where the first and second processing time and temperature are insufficient to move the implanted dopant ions to a depth of more than 80 nanometers from the surface.