Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.

Abstract: Provided is a method for purifying a quaternary alkyl ammonium salt enabling the obtainment of a particulate quaternary alkyl ammonium salt having a low water content at a high yield which is suitably used as an electrolyte in an electrolytic solution. The method for the purification of a quaternary alkyl ammonium salt comprises dispersing a quaternary alkyl ammonium salt to be purified into an organic solvent to allow it to form a suspension there. The alkyl groups constituting the quaternary alkyl ammonium salt have 1 to 5 carbon atoms each. The quaternary alkyl ammonium salt to be purified is dispersed into the organic solvent to make a suspension, and then the particles are washed with an alcohol solvent.

Abstract: An object of the present invention is to provide a method for purifying a highly pure niobium compound and/or tantalum compound, the method enabling the purification of a highly pure niobium compound and tantalum compound in a simplified manner at a low cost. The object is met by providing a method comprising adding an organic solvent to an aqueous solution containing a niobium compound and/or tantalum compound together with impurities, and then performing extraction via the solution. A niobium compound and/or tantalum compound dissolved in a solution is allowed to precipitate, and said aqueous solution is obtained by dissolving the precipitate in water.

Abstract: The present invention provides a method enabling the high purification of a niobium compound and/or tantalum compound in a simplified manner at a low cost. This is accomplished by providing a method enabling the high purification of a niobium compound and/or tantalum compound comprising the steps of preparing a solution containing niobium and/or tantalum, allowing a precipitate comprising niobium and/or tantalum to develop, separating the precipitate by filtration from the filtrate, converting the precipitate to a liquid melt or taking the filtrate, and separating a niobium compound from a tantalum compound or vice versa by utilizing the difference in solubility to the solvent between the niobium compound and the tantalum compound.

Abstract: A method for reducing oxygen and carbon components in high-purity fluoride such as calcium fluoride and barium fluoride (a high-purity fluoride that is not limited to calcium fluoride and barium fluoride), or in rare-earth fluorides such as ytterbium fluoride and cerium fluoride used for an optical fiber, a coating material, and so on. The oxygen and carbon components contained in the high-purity fluoride are reduced by a fluorine gas treatment.

Abstract: In order to provide a method for producing lithium hexafluorophosphate capable of producing lithium hexafluorophosphate of a higher purity than in the related art without the necessity for after-treatment for removal of impurities, a method is characterized by filtering lithium hexafluorophosphate coexisting with a solvent and then carrying out after-filtering drying in a gas atmosphere containing PF5.

Abstract: A method for removing calcium from water containing a high concentration of calcium bicarbonate, permitting a reduction of the calcium bicarbonate equivalent to 200-500 ppm calcium to the level in accordance with the water quality standards for industrial use, not by a method using a large amount of heat and power as heating and deairing, but by a simple chemical treatment. Calcium hydroxide is added to waste water containing a high concentration of calcium in a form of calcium bicarbonate for making them react with each other, and removing calcium by fixing it to calcium bicarbonate.

Abstract: A method for purifying tungsten hexafluoride of high purity, capable of producing tungsten hexafluoride of higher purity than that of the related art, readily and at a low cost. A method for purifying tungsten hexafluoride of high purity, characterized in that tungsten hexafluoride containing molybdenum hexafluoride as an impurity, makes contact with a layer, in which a metal or an alloy is packed, containing at least one of molybdenum, tungsten, copper, nickel, iron, cobalt, zinc, titanium, aluminum, calcium, and magnesium at a temperature ranging from 0° C. to 100° C.

Abstract: A method of purifying lithium hexafluorophosphate that allows to purify lithium hexafluorophosphate, useful as lithium secondary cell electrolyte, organic synthesis medium or the like, to an extremely high purity is provided. Lithium hexafluorophosphate containing harmful impurities such as oxyfluoride, lithium fluoride is purified by adding phosphoric chloride. The purification is performed in the presence of phosphoric chloride and hydrogen fluoride of the quantity equal or superior to the equivalent amount for reacting them, and then by converting lithium fluoride lithium hexafluorophosphate with generated phosphor pentafluoride.

Abstract: A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

Abstract: The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190Å consisting of a metal fluoride as a main component.

Abstract: A method is provided for fixing and eliminating fluorine and phosphorus in waste water wherein the waste water includes a fluorophosphate compound in which hydrochloric acid is added to the waste water including the fluorophosphate compound. The waste water to which hydrochloric acid has been added is heated in order to decompose the fluorophosphate compound into hydrogen fluoride and phosphoric acid, while hydrogen chloride gas located within a treating vessel in which the waste water is contained is introduced into a condenser provided outside of the treating vessel, and then a calcium salt is added to the waste water after decomposition in order to fix and eliminate fluorine and phosphorus.

Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: A method of purifying lithium hexafluorosphate that allows to purify lithium hexafluorophosphate, useful as lithium secondary cell electrolyte, organic synthesis medium or the like, to an extremely high purity is provided. Lithium hexafluorophosphate containing harmful impurities such as oxyfluoride, lithium fluoride is purified by adding phosphoric chloride. The purification is performed in the presence of phosphoric chloride and hydrogen fluoride of the quantity equal or superior to the equivalent amount for reacting them, and then by converting lithium fluoride to lithium hexafluorophosphate with generated phosphor pentafluoride.

Abstract: A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.