Abstract: A process for modifying an oxide surface of a semi-conductor material, for example included in an ISFET, wherein a coating of a polymer is applied to the oxide surface. The polymer is chemically bonded to the oxide surface. Optionally a second coating can comprise metal ion complexing groups. The process can be used for manufacturing an ISFET.
Type:
Grant
Filed:
November 19, 1985
Date of Patent:
April 5, 1988
Assignee:
Stichting Centrum Voor Micro-Electronica Twente
Inventors:
David N. Reinhoudt, Marcel L. M. Pennings, Auke G. Talma