Patents Assigned to Stiftelsen Institutet for Microvagsteknik VID
  • Method for producing thin conductive and semi-conductive layers in mono-crystal silicon
    Patent number: 4837174
    Abstract: A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and subsequently causing the implanted metal atoms to be redistributed, to form a conductive or a semiconductive layer (16), by heat-treating the silicon substrate (15).
    Type: Grant
    Filed: July 30, 1987
    Date of Patent: June 6, 1989
    Assignee: Stiftelsen Institutet for Microvagsteknik VID
    Inventor: Sture Peterson