Abstract: A radiation hardened memory device having static random access memory cells includes active gate isolation structures to prevent leakage currents between active regions formed adjacent to each other on a substrate. The active gate isolation structure includes a gate oxide and polycrystalline silicon gate layer electrically coupled to a voltage terminal resulting in an active gate isolation structure that prevents a conductive channel extending from adjacent active regions from forming. The gate oxide of the active gate isolation structures is relatively thin compared to the conventional oxide isolation regions and thus, will be less susceptible to any adverse influence from trapped charges caused by radiation exposure.