Abstract: In an embodiment a processing system includes a reset circuit configured to receive a reset-request signal and one or more further reset-request signals, wherein the one or more further reset-request signals are provided by a processing core, one or more further circuits and/or a terminal of the processing system and to generate a combined reset-request signal by combining the reset-request signal and the one or more further reset-request signals, and a hardware test circuit including for each of the one or more further reset-request signals, a respective first combinational circuit configured to selectively assert the respective further reset-request signal, a second combinational logic circuit configured to selectively mask the combined reset-request signal, and a control circuit configured to repeat operations during a diagnostic phase.

Abstract: A method of operating a touch screen panel includes initiating a communication between the panel and an active pen and determining a touch zone of the panel. The touch zone includes communication channels that are operating by touch while bi-directional communication is occurring between the panel and active pen. Communications channels within the touch zone are disabled and communication between the panel and the active pen can occur while the communications channels within the touch zone are disabled. When it is determined that the communication between the panel and the active pen has stopped, communications channels continue to be disabled within the touch zone for a set time delay while no communication occurs between the panel and the active pen. After the set delay time, the communication channels within the touch zone are enabled.

Abstract: A time-based DC-DC converter is controlled in response to a first oscillator signal based on a first control signal, a second oscillator signal based on a second control signal and a controlled current based on a feedback control signal. The first control signal and the second control signal are a function of the controlled current. The feedback control signal is generated as a function of the first and second oscillator signals by: generating at least two binary signals including a first binary signal based on a difference between the first oscillator signal and the reference signal and a second binary signal based on a difference between the second oscillator signal and the reference signal; and generating via a charge pump the feedback control signal based on the first binary signal and the second binary signal.

Abstract: Provided is a circuit for managing a first clock signal clocking a timer adapted to being controlled by a processor clocked by a second clock signal. When the processor is off, the first clock signal is equal to a third clock signal having a frequency lower than the frequency of the second clock signal. When the processor is on, the first clock signal is equal to a fourth signal having a rising edge at each rising edge of the second clock signal directly following a rising edge of the third clock signal.

Abstract: A device includes trenches. The trenches each include a conductive element configured to electrically couple coupling fingers of transistor gates located on a first side of a first layer, to a second layer extending on the side of a second face of the first layer.

Abstract: A pixel includes a first doped region of a first conductivity type and a second doped region of a second conductivity type. The first doped region includes first and second layers forming a heterojunction. A dopant concentration of the first layer is greater than a dopant concentration of the second layer. The first layer is made of a semiconductor material and the second layer includes quantum dots. The second doped region is in contact with the second layer, with the first layer being laterally surrounded by an insulated conductive wall that is biased to a negative voltage.

Abstract: A process for manufacturing a microelectromechanical device includes: on a body containing semiconductor material, forming a sacrificial layer of dielectric material having a first surface, opposite to the body; conferring a sacrificial surface roughness to the first surface of the sacrificial layer; on the first surface of the sacrificial layer, forming a structural layer of semiconductor material having a second surface in contact with the first surface of the sacrificial layer. Conferring sacrificial surface roughness to the first surface of the sacrificial layer includes: on the sacrificial layer, forming a transfer layer of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer through the transfer layer.

Abstract: A control circuit provides a drive signal to an electronic switch of an electronic converter. A first driving circuit has a first enable node receiving a first enable signal and a PWM signal generator circuit configured to provide a PWM drive signal in response to the first enable signal. A second driving circuit has a second enable node configured to receive a second enable signal and a PFM signal generator circuit configured to provide a PFM drive signal in response to the second enable signal. Logic circuitry coupled to the first and second driving circuits is configured to assert at least one of the first and second enable signals in response to a mode selection signal.

Abstract: Disclosed herein is a system for measuring current, including an input inductor and a self-test inductor through which respective input and self-test currents flow. A Hall-effect sensor circuit senses magnetic fields around these inductors, producing differential voltage outputs. These outputs are received by an input and self-test extraction circuit, which alternatingly outputs differential voltages representative of the magnetic fields around the inductors. Amplification of these differential voltages is performed by an amplifier. Sampling of the amplified differential voltages is performed by two sample/hold circuits, each designated for a specific inductor's magnetic field. An integrator circuit adjusts a voltage for the Hall effect sensor circuit, causing the gain applied to the sampled differential voltage to remain consistent and uninfluenced by the sensitivity of the Hall effect sensor circuit.

Abstract: A clock generator circuit includes an oscillator circuit coupled to a bias circuit. The bias circuit includes a current mirror, third and fourth transistors, and a cascode transistor. The current mirror includes a reference transistor and a set of copy transistors that are programmable. The third transistor has a source connected to a cold spot, a drain and a gate connected to this drain. The fourth transistor has a source connected to the drain of the third transistor, a drain, and a gate connected to that drain. The cascode transistor has a source connected to a drain of at least one of the copy transistors, a drain, and a gate connected to the gate of the fourth transistor. The gates of the fourth transistor and the cascode transistor are thicker than the gates of the reference transistor, each copy transistor, and the third transistor.

Abstract: An audio device includes a gain step selection circuit that receives a different requested gain value and an associated requested step size from each of a plurality of sources, compares each requested gain value to a same feedback gain value and generates a polarity based thereupon, performs step polarization on each requested step size as a function of the generated polarity therefor to thereby generate a plurality of step values, and outputs a least of the plurality of step values as an output step value. An accumulator circuit generates a current input gain value based upon the output step value and the feedback gain value, and then updates the feedback gain value to be equal to the current input gain value. A normalizing circuit multiplies an input data value by the current input gain value and applies a truncation function to a result thereof to produce an output data value.

Abstract: Described herein is a lock system (e.g., for a vehicle door) including an NFC circuit in communication with a microcontroller that monitors the voltage of a battery (e.g., the vehicle battery). The microcontroller switches the NFC circuit to card emulation (CE) mode with energy harvesting capability when the battery voltage falls below a threshold so that the NFC circuit can harvest energy from a nearby Qi wireless charging field and store that harvested energy in an energy storage device. When the energy storage device is sufficiently charged, it is used power the microcontroller and an electronically actuated mechanical lock (e.g., vehicle door lock), then the microcontroller cooperates with the NFC circuit to switch the NFC circuit to NFC reader mode and attempt to verify a nearby NFC device. If the NFC device is verified, the microcontroller operates the lock, otherwise, it maintains the lock in an inactive state.

Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

Abstract: A memory array includes a plurality of bit-cells arranged as a set of rows of bit-cells intersecting a plurality of columns. The memory array also includes a plurality of in-memory-compute (IMC) cells arranged as a set of rows of IMC cells intersecting the plurality of columns of the memory array. Each of the IMC cells of the memory array includes a first bit-cell having a latch, a write-bit line and a complementary write-bit line, and a second bit-cell having a latch, a write-bit line and a complementary write-bit line, wherein the write-bit line of the first bit-cell is coupled to the complementary write-bit line of the second bit-cell and the complementary write-bit line of the first bit-cell is coupled to the write-bit line of the second bit-cell.

Abstract: A structure including a base portion (e.g., made of a graphite-based or graphene-based material) with at least one surface that is coated with a homogenous coating layer (e.g., made of silicon-carbide (SiC)). The homogenous coating layer prevents contaminants (e.g., carbon) from being released by the base portion into a cavity of a processing tool when heated to process one or more workpieces (e.g., silicon substrate, silicon wafers, etc.) present within the cavity. The homogenous coating layer includes grains and grain boundaries that are relatively the same size and shape as each other, which further prevents propagation of defects (e.g., cracking, peeling, etc.) that could potentially cause exposure of a region of the first surface of the base portion to the cavity of the processing tool contaminating the one or more workpieces present within the cavity of the processing tool.

Abstract: A sensor module includes a pattern generator configured to generate a variable frequency self-test signal. The sensor module includes an inertial sensor including a self-test electrode configured to receive the frequency sweep self-test signal. The inertial sensor is configured to generate an analog sensor signal based on the self-test signal. The sensor module includes an analog to digital converter configured to generate a digital sensor signal based on the analog sensor signal and a demodulator including a first input configured to receive the digital sensor signal, a second input configured to receive the self-test signal, and an output configured to output a demodulated signal. The sensor module includes a first low pass filter coupled to the output of the demodulator and configured to generate a baseband signal. The sensor module includes a calibration circuit configured to identify different MEMS characteristics, like resonance frequency, Q-factor, or sensitivity based on the baseband signal.

Abstract: An electrostatic discharge protection circuit protects a first transistor. The circuit includes N diodes in series between conduction terminals of the first transistor. A second transistor and third transistor are connected in series between the conduction terminals of the first transistor. A control terminal of the third transistor is coupled to an anode of the N diodes. A first inverter couples the control terminals of the first and second transistors. A fourth transistor is connected in parallel with the first transistor. A control terminal of the fourth transistor is coupled to the junction point of the second and third transistors. A capacitor is arranged between the control terminal of the fourth transistor and a conduction terminal of the first transistor.

Abstract: A substrate includes electrically conductive leads arranged laterally of a die mounting location. A semiconductor die is mounted at the die mounting location. An electrical coupling member electrically couples the semiconductor die with one or more electrically conductive leads. The electrical coupling member includes one or more electrically conductive pads having first and second electrically conductive ribbons protruding therefrom. The first and second electrically conductive ribbons have proximal ends at the electrically conductive pad and distal ends away from the electrically conductive pad. The distal ends of the first and second electrically conductive ribbons are electrically coupled to the semiconductor die and an electrically conductive lead, respectively, to provide electrical coupling therebetween.