Abstract: The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.

Abstract: A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.

Abstract: An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

Abstract: An image projection device, such as a pico projector or LCD projector, includes image projection circuitry configured to generate a light beam having a power. The image projection circuitry projects the light beam onto and focuses the light beam on a projection surface located an imaging distance from the image projection circuitry. A time-of-flight sensor is configured to sense the imaging distance between the image projection circuitry and the projection surface and to generate an imaging distance signal indicating the sensed imaging distance. Control circuitry is coupled to the image projection circuitry and to the time-of-flight sensor and is configured to adjust the power and the focus of the light beam based upon the imaging distance signal.

Abstract: The present disclosure relates to receiving an input signal; generating an output signal by integrating a leaked signal over an integration time, wherein the leaked signal is obtained based on a dampening signal, a leak factor and the input signal; and providing the output signal.

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

Abstract: In an embodiment of the present invention, a method for controlling a voltage across a single photon avalanche diode includes: providing an output based on a current flowing through the single photon avalanche diode; and controlling the voltage applied across the single photon avalanche diode based on the provided output.

Abstract: A method for detecting an orientation of a screen of a device includes having a two-dimensional (2D) detector array affixed to the device in a fixed orientation relative to the screen, where the 2D detector array includes a sensing area with a plurality of pixels; imaging a scene including a user in a foreground and a background onto the 2D detector array; extracting an information of the scene for each of the plurality of pixels of the sensing area, the information being extracted from the 2D detector array by an image sensor; identifying an asymmetry in a pixelated image of the scene that includes the information of the scene for each of the plurality of pixels of the sensing area; and based on the asymmetry in the image of the scene, determining the orientation of the screen relative to the user.

Abstract: Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.

Abstract: The present disclosure is directed to a diode including a first doped structure, doped with a first type of material and forming at least part of an isolation structure for the diode; at least one contact structure located within the first doped structure, the at least one contact structure forming one of the cathode or anode of the diode; a second doped structure, doped with a second type of material, and forming at least one depletion region or PN junction with the first doped structure; at least one second contact structure located within the second doped structure, the at least one second contact structure forming the other of the anode or the cathode of the diode; at least one further contact structure, doped with the first type of material, the at least one further contact structure forming at least one further depletion region or further PN junction, such that the at least one further depletion region is configured to steer charge from the at least one depletion region and thus decrease the sensitivity

Abstract: The present disclosure is directed to a fluidic ejection device configured to detect whether one or more nozzles of the fluidic ejection device is in a normal state, a blocked nozzle state, or an accumulated fluid state. The fluidic ejection device includes an optical blockage detector having a light emitting device configured to emit a light signal, and a light sensor configured to detect the light signal. The optical blockage detector detects the normal state, the blocked nozzle state, and the accumulated fluid state based on the detected light signal.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.

Abstract: Disclosed herein is a time of flight sensing module that includes a reflected laser light detector formed on a printed circuit board, and a plurality of laser modules positioned about a periphery of the reflected laser light detector. Each laser module includes an interposer substrate vertically spaced apart from the printed circuit board, at least one laser diode carried by the interposer substrate, and a diffuser spaced apart from the interposer substrate and over the at least one laser diode. A lens may be positioned over the reflected laser light detector, and the plurality of laser modules are positioned about the periphery of the lens.

Abstract: A driver circuit for a laser diode is configured to pass a current. The circuit includes a charge-pump configured to generate an output boosted positive supply rail voltage. At least one switch is configured to couple the output of the charge-pump to a terminal of the laser diode and to isolate the positive supply rail from the terminal of the laser diode when the charge-pump is enabled.

Abstract: A system and method are provided on one or more companion chips having a plurality of cores. Each core has core circuitry and a test interface for carrying out tests in relation to the core circuitry. The test interface has an address register to hold an address of the core and address determination circuitry. The address determination circuitry is configured to compare an address received on an address line to the address held in the address register to determine whether a core is being addressed. The address determination circuitry is also configured to direct the test interface to carry out a testing operation in response to the determination.

Abstract: Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.

Abstract: A single photon avalanche diode (SPAD) has a cathode coupled to a high voltage supply and an anode coupled to a first node. A photodetection circuit includes: a first n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a third node; a second n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node; and an inverter having an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node, a logic gate has inputs coupled to the intermediate node and the second node, and an output coupled to the third node.

Abstract: An electronic device includes a time-of-flight unit with a laser emitting ranging light toward a scene, and a detector detecting ranging light reflected from the scene. The detector includes photodetection regions of macropixels. Each macropixel includes photodiodes, and OR logic circuitry receiving outputs of photodiodes as input and generating a detection signal. Each macropixel has output combining logic, and selection circuitry selectively passing the detection signal to the output combining logic or to output combining logic of a neighboring macropixel. The output combining logic has inputs coupled to the selection circuitry and the selection circuitry of the neighboring macropixel, and generates an output signal by logically combining outputs of the selection circuitry and the selection circuitry of the neighboring macropixel.