Patents Assigned to STMICROELECTRONICS (ROUSSET)
  • Publication number: 20140273836
    Abstract: An anticollision method for an NFC device wherein, in reader mode, a variation of a piece of information representative of the amplitude of the signal in an antenna of the device is monitored, and if this piece of information exceeds a threshold, the device is switched to the card mode.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 18, 2014
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Pierre Rizzo, Nathalie Vallespin, Emmanuel Papart
  • Patent number: 8835923
    Abstract: The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 16, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Pascal Fornara
  • Patent number: 8830761
    Abstract: The disclosure relates to a method of reading and writing memory cells, each including a charge accumulation transistor in series with selection transistor, including applying a selection voltage to a gate of the selection transistor of the memory cell; applying a read voltage to a control gate of the charge accumulation transistor of the memory cell; applying the selection voltage to a gate of the selection transistor of a second memory cell coupled to the same bitline; and applying an inhibition voltage to a control gate of the charge accumulation transistor of the second memory cell, to maintain the transistor in a blocked state.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: September 9, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Francesco La Rosa, Olivier Pizzuto, Stephan Niel, Philippe Boivin, Pascal Fornara, Laurent Lopez, Arnaud Regnier
  • Patent number: 8824210
    Abstract: The disclosure relates to a hot electron injection MOS transistor, comprising source and drain regions formed in a semiconductor substrate, a control gate, and a floating gate comprising electrically conductive nanoparticles. The control gate comprises a first portion arranged at a first distance from the substrate, a second portion arranged at a second distance less than the first distance from the substrate, and an intermediary portion linking the first and the second portions.
    Type: Grant
    Filed: April 4, 2012
    Date of Patent: September 2, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Francesco La Rosa
  • Patent number: 8819609
    Abstract: The disclosure relates to a countermeasure method in an electronic microcircuit, comprising successive process phases executed by a circuit of the microcircuit, and adjusting a power supply voltage between power supply and ground terminals of the circuit, as a function of a random value generated for the process phase, at each process phase executed by the circuit.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: August 26, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Mathieu Lisart, Fabrice Marinet
  • Patent number: 8809858
    Abstract: An integrated circuit including: a semiconductor substrate of a first conductivity type having at least one well of a second conductivity type laterally delimited, on two opposite walls, by regions of the first conductivity type, defined at its surface; at least one region of the second conductivity type which extends in the semiconductor substrate under the well; and a system for detecting a variation of the substrate resistance between each association of two adjacent regions of the first conductivity type.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: August 19, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Mathieu Lisart, Thierry Soudé, Alexandre Sarafianos, Francesco La Rosa
  • Patent number: 8810272
    Abstract: An electronic device includes an electronic component and a protection circuit configured to protect the component from overvoltages. A control circuit is configured to inhibit a part of the protection circuit in the presence of a test voltage across terminals of the component.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: August 19, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: François Tailliet
  • Publication number: 20140227973
    Abstract: A method for configuring a first device for a near-field communication with a second device, wherein a peer-to-peer mode is selected if the second device draws the power supply of its circuits from a battery.
    Type: Application
    Filed: February 10, 2014
    Publication date: August 14, 2014
    Applicants: STMicroelectronics (Rousset) SAS, Proton World International N.V.
    Inventors: Olivier Van Nieuwenhuyze, Alexandre Charles
  • Patent number: 8806109
    Abstract: A method for protecting at least first data of a non-volatile memory from which the extraction of this first data is triggered by the reading or the writing, by a processor from or into the memory, of second data independent from the first data, said first data being provided to a circuit which the processor cannot access.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: August 12, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Sylvie Wuidart
  • Patent number: 8802455
    Abstract: A process is provided for fabricating a wafer including a plurality of chips separated by scribe lines. The method includes locking at least one chip on the wafer using a secret key, and writing the secret key into at least one memory present on the wafer.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: August 12, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Francois Tailliet, Marc Battista, Luc Wuidart
  • Patent number: 8796765
    Abstract: An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Mathieu Lisart, Alexandre Sarafianos, Olivier Gagliano, Marc Mantelli
  • Patent number: 8798533
    Abstract: A method for evaluating the current coupling factor between an electromagnetic transponder and a terminal, and a transponder implementing this method, wherein a ratio between data representative of a voltage across an oscillating circuit of the transponder and obtained for two capacitance values of the oscillating circuit is compared with one or several thresholds.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Luc Wuidart
  • Publication number: 20140209141
    Abstract: Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically interconnected by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements, and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically connected in series and thermally connected in parallel and contained within the said region subjected to the said temperature gradient.
    Type: Application
    Filed: July 5, 2012
    Publication date: July 31, 2014
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Pascal Fornara, Christian Rivero
  • Patent number: 8792262
    Abstract: A method of programming memory cells in a nonvolatile memory, includes applying a programming voltage to a first bitline and setting a second bitline in a floating state. The method further includes applying a compensation voltage to a shield conductive line coupled to the bitline set in the floating state, and setting in the floating state a shield conductive line coupled to the bitline receiving the programming voltage. The method is applicable to the reduction of the parasitic programming phenomena of memory cells by capacitive coupling between bitlines.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: July 29, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Francois Tailliet
  • Publication number: 20140208190
    Abstract: A method is for processing transmission errors during contactless communication of information between a device and a reader. The information may be transmitted in the form of frames sent to a send/receive module of the reader in contactless coupling with the device and controlled by a control module coupled to the send/receive module. The information may be extracted from the frames within the send/receive module so as to be delivered to the control module. The method may include a detection of transmission errors that are to be ignored.
    Type: Application
    Filed: January 14, 2014
    Publication date: July 24, 2014
    Applicants: MELEXIS TECHNOLOGIES NV, STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Thierry BOUSQUET, Oleksandr ZHUK
  • Patent number: 8788895
    Abstract: A system for testing an integrated circuit including components for receiving clock signals corresponding to different clock domains includes a pin of the integrated circuit to receive a test clock signal for components included in different clock domains, clock gating cells integrated in the integrated circuit to direct said test clock signal from the pin towards components included in respective clock domains and, coupled to each of the gating cells, a dedicated flip-flop for a respective clock domain, the dedicated flip-flop being also integrated in the integrated circuit to effect on the cell to which it is coupled a clock gating function during testing of the integrated circuit.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: July 22, 2014
    Assignees: STMicroelectronics S.r.l., STMicroelectronics (Rousset) SAS
    Inventors: Nelly Feldman, Stefano Catalano
  • Patent number: 8789165
    Abstract: A method may be for detecting potentially suspicious operation of an electronic device configured to operate in the course of activity sessions. The method may include within the device, a metering, from an initial instant of the number of activity sessions having a duration below a first threshold, and a comparison of this number with a second threshold.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: July 22, 2014
    Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics N.V.
    Inventors: Marco Bildgen, Jean Devin
  • Publication number: 20140201815
    Abstract: The invention relates to a method of protecting a security module (14) equipping a telecommunication device equipped with a near-field communication router (18), against an attempt to divert a channel for communication between a port of this security module and a port of the router, in which upon each request originating from the router and destined for the security module, the latter verifies the rights of access to the information that it contains as a function of the provenance of the request.
    Type: Application
    Filed: April 6, 2012
    Publication date: July 17, 2014
    Applicants: STMicroelectronics (Rousset) SAS, Proton World International N.V.
    Inventors: Olivier Van Nieuwenhuyze, Thierry Huque, Alexandre Charles
  • Patent number: 8779552
    Abstract: An integrated circuit chip formed inside and on top of a semiconductor substrate and including: in the upper portion of the substrate, an active portion in which components are formed; and under the active portion and at a depth ranging between 5 and 50 ?m from the upper surface of the substrate, an area comprising sites for gettering metal impurities and containing metal atoms at a concentration ranging between 1017 and 1018 atoms/cm3.
    Type: Grant
    Filed: October 4, 2010
    Date of Patent: July 15, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Pascal Fornara, Fabrice Marinet
  • Patent number: 8782304
    Abstract: The present disclosure relates to a method for enabling a virtual processing unit to access a peripheral unit, the virtual processing unit being implemented by a physical processing unit connected to the peripheral unit, the method comprising a step of transmitting to the peripheral unit a request sent by the virtual processing unit to access a service provided by the peripheral unit, the access request comprising at least one parameter and an identifier of the virtual unit, the method comprising steps, executed by the peripheral unit after receiving an access request, of allocating a set of registers to the virtual unit identifier received, storing the parameter received in the register set allocated, and when the peripheral unit is available for processing a request, selecting one of the register sets, and triggering a process in the peripheral unit from the parameters stored in the selected register set.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: July 15, 2014
    Assignee: STMicroelectronics Rousset SAS
    Inventors: Christian Schwarz, Joel Porquet