Abstract: A method, comprises: providing a laminar support member, having a front surface, arranging on the front surface at least one semiconductor die having a front surface and a back surface, with the back surface thereof towards the front surface of the support member and with the front surface thereof having die pads, arranging at the front surface of the support member sidewise of the at least one semiconductor die a plurality of electrically-conductive bodies, the electrically-conductive bodies arranged at respective recesses in the support member, wherein the electrically-conductive bodies protrude from the plane away from the front surface of the support member, providing a filling of molding material over the laminar support member between the at least one semiconductor die and the electrically-conductive bodies, and providing electrically-conductive lines between selected ones of the die pads of the semiconductor die and selected ones of the plurality of electrically-conductive bodies.

Abstract: A radiofrequency harvester circuit may be used in a battery-less RFID device. The harvester circuit includes an antenna unit that captures radiofrequency signals and harvesting circuitry coupled to the antenna unit for collecting energy from the radiofrequency signals captured by the antenna unit. The antenna unit is selectively tunable at a plurality of tuning bands that are scanned by selectively tuning the antenna unit at different frequency bands and sensing respective values indicative of the power of radiofrequency signals captured by the antenna unit at the frequency bands scanned. A highest value out of said respective values for the power of radiofrequency signals as well as the frequency band in the plurality of tuning bands of the antenna unit providing the aforesaid highest value are identified and the harvester circuit is operated with the antenna unit tuned at the frequency band providing the highest value thus identified.

Abstract: A half-bridge converter is controlled by a circuit including a differential circuit receiving a reference signal and a feedback signal which is a function of an output signal from the converter. The half-bridge converter includes high-side and low-side electronic switches. A comparator generates a PWM-modulated signal for controlling the converter as a function of the duty cycle of the PWM-modulated signal in response to a signal at an intermediate node between the high-side and low-side electronic switches and an output of the differential circuit. A gain circuit block coupled between the intermediate node and the input of the comparator applies a ramp signal to the input of the comparator which is a function of the signal at the intermediate node. A variable gain is applied by the gain circuit block in order to keep a constant value for the duty cycle of said PWM-modulated signal irrespective of converter operation.

Abstract: A circuit arrangement, including: a circuit configured to synthesize a resistor having a resistance value having a variation in time equivalent to a resistance variation of a sensor resistor applied with a resistance bias voltage and a resistance current bias, wherein the circuit includes: an amplifier comprising an input transistor; a bias current generator comprising a control node coupled to an output of the input transistor, wherein the bias current generator is configured to generate a bias current flowing in the input transistor; and a further current generator configured to generate a current at least proportional to the resistance bias current and coupled to the output of the input transistor, wherein the resistance bias voltage is applied to an input of the amplifier, and wherein a transconductance of the input transistor is at least proportional to the resistance of the sensor resistor.

Abstract: In at least one embodiment, an interface electronic circuit for a capacitive acoustic transducer having a sensing capacitor is provided. The interface electronic circuit includes an amplifier, a voltage regulator, a common-mode control circuit, and a reference generator. The amplifier has an input coupled to an electrode of the sensing capacitor. The voltage regulator is configured to receive a regulator reference voltage, generate a regulated voltage based on the regulator reference voltage, and supply the regulated voltage to a supply input of the amplifier. The common-mode control circuit controls a common-mode voltage present on the input of the amplifier based on a common-mode reference voltage. The reference generator receives a supply voltage and generates the regulator reference voltage and the common-mode reference voltage with respective values that are variable as a function of the supply voltage.

Abstract: A process for manufacturing an optical system includes forming a first hydrophobic surface at a semiconductor substrate, providing a first drop of transparent material having a first shape on the first hydrophobic surface, and allowing the first drop to harden to form a first optical element having the first shape. The optical system may be a particle detector, and the process may optionally further include forming a light source at the semiconductor substrate configured to generate a light beam that passes through the first optical element and a cavity to a photodetector.

Abstract: A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.

Abstract: A method of making an integrated circuit (IC) includes forming circuitry over a top surface of a semiconductor substrate having the top surface and an opposite bottom surface. An antenna is formed in an interconnect layer formed above the semiconductor substrate, where the antenna is coupled to circuitry. A seal ring is formed around a periphery of the interconnect layer. The seal ring is disposed around the antenna and the circuitry. A trench with a solid-state insulating material is formed. The trench extends vertically into the semiconductor substrate and extends laterally across the IC.

Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

Abstract: Packaged semiconductor device having a frame, of conductive material; a body of semiconductor material, fixed to the frame through a first adhesive layer; a heatsink element, fixed to the body through a second adhesive layer; and a packaging mass surrounding the body and, at least partially, the frame and the heatsink element. The heatsink element is formed by a heatsink die facing, and coplanar to, a main face of the device and by a spacer structure, which includes a pair of pedestals projecting from the perimeter of the heatsink die towards the body and rest on the body.

Abstract: A manufacturing method of an HEMT includes: forming a heterostructure; forming a first gate layer of intrinsic semiconductor material on the heterostructure; forming a second gate layer, containing dopant impurities of a P type, on the first gate layer; removing first portions of the second gate layer so that second portions, not removed, of the second gate layer form a doped gate region; and carrying out a thermal annealing of the doped gate region so as to cause a diffusion of said dopant impurities of the P type in the first gate layer and in the heterostructure, with a concentration, in the heterostructure, that decreases as the lateral distance from the doped gate region increases.

Abstract: A driving circuit for a microelectromechanical system (MEMS) gyroscope operating based on the Coriolis effect is provided. The driving circuit supplies drive signals to a mobile mass of the MEMS gyroscope to cause a driving movement of the mobile mass to oscillate at an oscillation frequency. The driving circuit includes an input stage, which receives at least one electrical quantity representing the driving movement and generates a drive signal based on the electrical quantity; a measurement stage, which measures an oscillation amplitude of the driving movement based on the drive signal; and a control stage, which generates the drive signals based on a feedback control of the oscillation amplitude. The measurement stage performs a measurement of a time interval during which the drive signal has a given relationship with an amplitude threshold, and measures the oscillation amplitude as a function of the time interval.

Abstract: An electronic circuit includes a switched-mode power supply and a linear voltage regulation circuit having an input stage, a first output stage, and a second output stage. A first load is capable of being powered either by the switched-mode power supply in series with the regulation circuit or by the regulation circuit without the switched-mode power supply.

Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Abstract: An active discharge circuit discharges an X capacitor and includes a sensor circuit that generates a sensor signal indicative of an AC voltage at the X capacitor. A processing unit generates a reset signal as a function of a comparison signal. A comparator circuit generates the comparison signal by comparing the sensor signal with a threshold. A timer circuit sets a discharge enable signal to a first logic level when the timer circuit is reset via a reset signal. The timer circuit determines the time elapsed since the last reset and tests whether the time elapsed exceeds a given timeout value. If the time elapsed exceeds the given timeout value, the timer circuit sets the discharge enable signal to a second logic level. A dynamic threshold generator circuit varies the threshold of the comparator circuit as a function of the sensor signal.

Abstract: The fluid ejection microfluidic device, has a substrate; a buried cavity within the first substrate; a membrane formed by the first substrate and extending between the buried cavity and a first main surface of the substrate; and an access channel extending through the substrate, laterally and externally to the buried cavity and to the membrane and isolated with respect to the buried cavity. A sealed actuation structure extends over the first main surface of the substrate. A containment layer, of polymeric material, extends over the first main surface of the substrate and forms a fluid containment chamber accommodating the sealed actuation structure. A nozzle body of semiconductor material closes the fluid containment chamber at the top and is traversed by an ejection opening, forming, together with the fluid containment chamber and the access channel, a fluidic path.

Abstract: A power MOS stage includes a first power MOS device and a second power MOS devices connected in parallel between a first node and a second node, the first power MOS device having a first voltage rating and the second power MOS device having a second voltage rating that is lower than the first voltage rating. A driver circuit is configured to drive control nodes of the first and second power MOS devices in a sequential manner when actuating the power MOS stage by actuating the first power MOS device before actuating the second power MOS device. The control nodes of the first and second power MOS devices are further driven in a sequential manner when deactuating the power MOS stage by deactuating the second power MOS device before deactuating the first power MOS device.

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

Abstract: A method for real-time quantitative detection of single-type, target nucleic acid sequences amplified using a PCR in a microwell, comprising introducing in the microwell a sample comprising target nucleic acid sequences, magnetic primers, and labelling probes; performing an amplification cycle to form labelled amplicons; attracting the magnetic primers to a surface through a magnetic field to form a layer including labelled amplification products and free magnetic primers; and detecting the labelled amplification products in the layer with a surface-specific reading method.

Abstract: A system recognizes a gesture of bringing a mobile electronic device to a user ear. The system may be integrated in the mobile electronic device and is provided with a movement sensor which provides a movement signal indicative of the movement of the mobile electronic device. A pressure sensor provides a pressure signal indicative of a pressure acting on the mobile electronic device during the movement. A processing stage performs a joint processing of the movement signal and of the pressure signal in order to recognize the gesture.