Abstract: An multi-die semiconductor device disclosed herein includes a metallic leadframe with a central die pad encircled by electrically-conductive leads. Mounted on the die pad are two semiconductor dice, each with dedicated bonding pads on the surfaces facing away from the die pad. A layer of laser-activatable material is precisely molded over the dice and the leadframe. This layer forms a network of laser-activated lines: the first subset establishes electrical connections between the dice bonding pads and the leadframe leads, while the second subset interconnects the bonding pads of the first die to those of the second. There are two distinct metallic layers; the lower one, directly on the laser-activated lines, is formed of electroless-plated material, and the upper one, enhancing the structure, is formed of electroplated material, thus providing robust and reliable interconnections within the device.

Abstract: A circuit includes at least one coupling node configured to be coupled, via a cable, to a load to transmit a supply voltage thereto. The circuit includes test circuitry configured to sense at least one sensing signal indicative of a value of the cable impedance and/or of the cable voltage across the cable, to perform a comparison between the at least one sensing signal and at least one threshold indicative either of a threshold resistance value for the cable impedance or indicative of a threshold voltage value for the cable voltage, produce a comparison signal as a result of the comparison.

Abstract: This disclosure pertains to a microelectromechanical systems (MEMS) device with a tiltable structure, a fixed supporting structure, and an actuation structure with driving arms connected to the tiltable structure by elastic decoupling elements. Described herein, particularly, is a planar stop structure between the driving arms and the tiltable structure, which functions to limit movement in the tiltable plane. This stop structure includes a first projection/abutment surface pair formed by a projection extending from a driving arm and an abutment surface formed by a recess in the tiltable structure. The projection and abutment surface are adjacent and spaced apart in the device's rest condition.

Abstract: A voltage regulator receives a reference voltage and generates a regulated voltage using a MOSFET having a gate terminal configured to receive a control voltage. A charge pump receives the regulated voltage and generates a charge pump voltage in response to an enable signal and a clock signal generated in response to the enable signal. The voltage regulator further includes a first switched capacitor circuit coupled to the gate terminal and configured to selectively charge a first capacitor with a first current and impose a first voltage drop on the control voltage in response to assertion of the enable signal. The voltage regulator also includes a second switched capacitor circuit coupled to the gate terminal and configured to selectively charge a second capacitor with a second current and impose a second voltage drop on the control voltage in response to one logic state of the clock signal.

Abstract: The present disclosure is directed to an air filter sensor system that can monitor a status of a filter and provide information to a remote system regarding the filter's status. The system can receive, by a computing server via one or more computer networks and from each of a plurality of sensor assemblies coupled to a corresponding plurality of air filters, information indicative of filter contamination levels respectively associated with each corresponding air filter of the plurality of air filters. Each of the respective filter contamination levels being provided by one sensor assembly of the plurality of sensor assemblies based at least in part on a difference in detected air pressure between first and second sides of the corresponding air filter.

Abstract: An embedded electronic system includes a volatile memory and a processor configured to execute a low-level operating system that manages allocation of areas of the volatile memory to a plurality of high-level operating systems. Each high-level operating system executes one or more of applications. The volatile memory includes a first portion reserved for execution data of a first application and a second portion intended to store execution data of a second application. The system is configured so that once the execution data of the first application are loaded in the first portion, the low-level operating system forbids unloading of the execution data of the first application from the first portion so that the execution data of the first application remain in the volatile memory in case of a deactivation or of a setting to standby of the first application.

Abstract: In an embodiment a system on chip includes a persistent power supply and anti-replay mechanism comprising a monotonic counter including a volatile counter register powered by the persistent power supply.

Abstract: A vertical conduction electronic power device includes a body delimited by a first and a second surface and having an epitaxial layer of semiconductor material, and a substrate. The epitaxial layer is delimited by the first surface of the body and the substrate is delimited by the second surface of the body. The epitaxial layer houses at least a first and a second conduction region having a first type of doping and a plurality of insulated-gate regions, which extend within the epitaxial layer. The substrate has at least one silicide region, which extends starting from the second surface of the body towards the epitaxial layer.

Abstract: A driving circuit is implemented for a driving resonator stage of a MEMS gyroscope including at least a first and a second electrode and a movable mass The driving circuit includes a synchronization stage which receives an electrical position signal indicative of the position of the movable mass and generates a reference signal phase- and frequency-locked with the electrical position signal; a driving stage which generates, on the basis of the reference signal, a first and a second driving signal, which are applied to the first and, respectively, the second electrodes, so that the movable mass is subject to a first and a second electrostatic force which cause the movable mass to oscillate.

Abstract: The MEMS device has: a sensor body having a functional structure configured to transduce a physical or chemical quantity into a corresponding electrical quantity; and a cap bonded to the sensor body and having a first cavity overlying the functional structure. The cap has a supporting portion and a cover portion that form the first cavity. The supporting portion is bonded to the sensor body. The cover portion is bonded to the supporting portion and has an inner wall delimiting on a side the first cavity and facing the functional structure. The MEMS device further has a first coating that extends within the first cavity on the inner wall of the cover portion.

Abstract: In an embodiment, a device comprises a memory, which, in operation, stores data samples associated with a plurality of data sensors, and circuitry, coupled to the memory, wherein the circuitry, in operation, generates synchronized output data sets associated with the plurality of data sensors. Generating a synchronized output data set includes: determining a reference sample associated with a sensor of the plurality of sensors; verifying a timing validity of a data sample associated with another sensor of the plurality of sensors; identifying a closest-in-time data sample associated with the another sensor of the plurality of sensors with respect to the reference sample; and generating the synchronized output data set based on interpolation.

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

Abstract: A half-bridge driver circuit is provided. The circuit includes a detector circuit that generates a signal indicating whether a floating reference voltage is greater than a second supply voltage. The detector circuit includes a first circuit, a second circuit and combinational logic circuit. A first comparator circuit of the first circuit monitors a voltage drop at a resistance and sets a first control signal to a first logic level when the monitored voltage drop is smaller than a first threshold. A second comparator circuit of the second circuit monitors a current provided by an output transistor of a current mirror and sets a second control signal to a first logic level when the monitored current is greater than a second threshold. The combinational logic circuit asserts the signal when the first control signal has the respective first logic level or the second control signal has the respective first logic level.

Abstract: A MEMS inertial sensor includes a supporting structure and an inertial structure. The inertial structure includes at least one inertial mass, an elastic structure, and a stopper structure. The elastic structure is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction. The stopper structure is fixed with respect to the supporting structure and includes at least one primary stopper element and one secondary stopper element. If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.

Abstract: A packaged semiconductor device includes a substrate having a first surface and a second surface opposite the first surface. At least one semiconductor die is mounted at the first surface of the substrate. Electrically-conductive leads are arranged around the substrate, and electrically-conductive formations couple the at least one semiconductor die to selected leads of the electrically-conductive leads. A package molding material is molded onto the at least one semiconductor die, onto the electrically-conductive leads and onto the electrically-conductive formations. The package molding material leaves the second surface of the substrate uncovered by the package molding material. The substrate is formed by a layer of electrically-insulating material.

Abstract: An electronic device such as an e-fuse includes analog circuitry configured to be set to one or more self-test configurations. To that effect the device has self-test controller circuitry in turn including: an analog configuration and sensing circuit configured to set the analog circuitry to one or more self-test configurations and to sense test signals occurring in the analog circuitry set to such self-test configurations, a data acquisition circuit configured to acquire and convert to digital the test signals sensed at the analog sensing circuit, and a fault event detection circuit configured to check the test signals converted to digital against reference parameters. The device includes integrated therein a self-test controller configured to control parts or stages of the device to configure circuits, acquire data and control test execution under the coordination of a test sequencer.

Abstract: In an embodiment, a method for controlling a synchronous rectifier (SR) transistor of a flyback converter includes: determining a first voltage across conduction terminals of the SR transistor; asserting a turn-on signal when a body diode of the SR transistor is conducting current; asserting a turn-off signal when current flowing through the conduction terminals of the SR transistor decreases below a first threshold; generating a gating signal based on an output voltage of the flyback converter and on the first voltage; turning on the SR transistor based on the turn-on signal and on the gating signal; and turning off the SR transistor based on the turn-off signal.

Abstract: A frequency modulation MEMS triaxial gyroscope, having two mobile masses; a first and a second driving body coupled to the mobile masses through elastic elements rigid in a first direction and compliant in a second direction transverse to the first direction; and a third and a fourth driving body coupled to the mobile masses through elastic elements rigid in the second direction and compliant in the first direction. A first and a second driving element are coupled to the first and second driving bodies for causing the mobile masses to translate in the first direction in phase opposition. A third and a fourth driving element are coupled to the third and fourth driving bodies for causing the mobile masses to translate in the second direction and in phase opposition. An out-of-plane driving element is coupled to the first and second mobile masses for causing a translation in a third direction, in phase opposition.

Abstract: Tray for containing electronic components formed by a bearing body, substantially planar, having a first and a second face. First holding structures extend from the first face of the bearing body and second holding structures extend from the second face of the bearing body. Each second holding structure is aligned with a respective first holding structure in a vertical direction perpendicular to the first and the second faces of the bearing body. Each first holding structure is formed by first protrusions mutually spaced by first spaces and arranged along a first closed line; each second holding structure is formed by second protrusions mutually spaced by second spaces and arranged along a second closed line. Each second protrusion is aligned, in parallel with the vertical direction, with the first spaces and each first protrusion is aligned, in parallel with the vertical direction, with the second spaces.

Abstract: A system basis chip is described. The system basis chip comprises a power supply circuit configured to receive an input voltage and generate a plurality of voltages, and a control circuit. Specifically, the power supply circuit is configured to selectively switch on a first and a second voltage of the voltages as a function of a control signal. The control circuit measures a resistance value of an external resistor connected to a terminal and selects one of a plurality of configurations as a function of the measured resistance value, wherein a first configuration indicates that said first voltage should be switched on before said second voltage and a second configuration indicates that said second voltage should be switched on before said first voltage. Accordingly, the control circuit may generate the control signal in order to switch on in sequence the first and the second voltage according to the selected configuration.