Patents Assigned to STMicroelectronics S.A. Universite Francois Rabelais
  • Integration of capacitive elements in the form of perovskite ceramic
    Patent number: 7700981
    Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.
    Type: Grant
    Filed: April 20, 2006
    Date of Patent: April 20, 2010
    Assignee: STMicroelectronics S.A. Universite Francois Rabelais
    Inventors: Ludovic Goux, Monique Gervais