Abstract: A hardware secure element includes a processing unit and a receiver circuit configured to receive data comprising a command field and a parameter field adapted to contain a plurality of parameters. The hardware secure element also includes at least one hardware parameter check module configured to receive at an input a parameter to be processed selected from the plurality of parameters, and to process the parameter to be processed to verify whether the parameter has given characteristics. The hardware parameter check module has associated one or more look-up tables configured to receive at an input the command field and a parameter index identifying the parameter to be processed by the hardware parameter check module, and to determine for the command field and the parameter index a configuration data element.

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.

Abstract: A method includes processing, by an arithmetic and logic unit of a processor, masked data, and keeping, by the arithmetic and logic unit of the processor, the masked data masked throughout their processing by the arithmetic and logic unit. A processor includes an arithmetic and logic unit configured to keep masked data masked throughout processing of the masked data in the arithmetic and logic unit.

Abstract: Provided is a circuit including a switching transistor having a control terminal configured to receive a control signal and having a current flow path therethrough. The switching transistor becomes conductive in response to the control signal having a first value. The current flow path through the switching transistor provides a current flow line between two nodes. In a non-conductive state, a voltage drop stress is across the switching transistor. The circuit comprises a sense transistor that is coupled to and a scaled replica of the switching transistor. The sense transistor has a sense current therethrough. The sense current is indicative of the current of the switching transistor. The circuit includes coupling circuitry configured to apply the voltage drop stress across the sense transistor in response to the switching transistor being non-conductive. In the non-conductive state, the voltage drop stress is replicated across both the switching transistor and the sense transistor.

Abstract: A microcontroller includes a memory, direct memory access (DMA) controllers and a microprocessor. The microprocessor maintains one or more memory protection (MP) configurations to control access to protected memory areas of the microcontroller. In response to a secure service call of an unsecure user-application, the microprocessor executes a state machine which disables interrupt requests, determining whether DMA controller configurations and MP configurations satisfy secure-service criteria. When the secure-service criteria are satisfied, at least one secure operation associated with the secure service call is performed, and memory areas accessed during the execution of the at least one secure operation are cleaned. The interrupt requests are re-enabled and a response to the secure service call is generated.

Abstract: A device comprising at least one controller handset possessing a housing and at least one control element that is arranged so as to protrude from the housing and to be movable with respect to the housing so as to allow a user to control at least one movement of at least one object that is external to the device, and a contactless transponder having at least one antenna that is housed in the at least one control element.

Abstract: An integrated circuit includes an input pad and a Schmitt trigger coupled to the input pad. The Schmitt trigger includes a first inverter and a second inverter. The Schmitt trigger includes a pull-up transistor coupled to an input of the second inverter and configure to supply a high reference voltage to the input of the second inverter.

Abstract: A method for providing an estimate of a time-of-flight between an ultrasonic signal emitted by a device and an ultrasonic echo signal returned by a target object hit by the ultrasonic signal and received at the device.

Abstract: In accordance with an embodiment, a circuit is configured to vary an intensity of a drive current of a resistive heater element based on the digital control signal. The circuit includes and output circuit configured to control a respective slew rate and an electric energy dissipated in the resistive heater element independently of a resistance value of the resistive heater element.

Abstract: An integrated circuit includes a first circuit block operating with a first clock signal and a second circuit block operating with a second clock signal. The first circuit block includes a clock phase generator that receives the first clock signal and outputs a plurality of phase signals. The first circuit block includes a phase selector that receives the phase signals and the second clock signal and selects one of the phase signals based on the second clock signal. The first circuit block transmits data to the second circuit block based on the selected phase signal.

Abstract: The present disclosure is directed to a detection method of a first or second state of a foldable electronic device including a first and a second hardware element tiltable to each other and accommodating a first and a second electrode which are in contact with each other when the foldable electronic device is in the first state and at a distance from each other otherwise. The detection method includes: acquiring a first and a second charge variation signal indicative of environmental electric/electrostatic charge variations detected by the first and second electrodes; generating a differential signal indicative of a difference between the first and the second charge variation signals; generating, as a function of the differential signal, one or more feature signals; and generating, as a function of the one or more feature signals, a contact signal indicative of the first or second states of the foldable electronic device.

Abstract: A server builds an update file to update software. The server compiles source code of an updated version of the software, generating a binary file of the updated version of the software. Memory locations are mapped to sections of the binary file based on mappings of sections of a binary file of a prior version of the software. Bits of sections of a plurality of sections of the binary file of the prior version are logically combined, bit-by-bit, with bits of corresponding sections of the binary file of the updated version. The logically combining includes: applying an exclusive or operation; or applying an exclusive nor operation. The update file is built based on the mapping of the memory locations and on results of the logical combining.

Abstract: An integrated circuit includes transistor. That transistor is manufactured using a process including the following steps: forming a first gate region; depositing dielectric layers accumulating on sides of the first gate region to form regions of spacers having a width; etching to remove a part of the deposited dielectric layers accumulated on the sides of the first gate region to reduce the width of the regions of spacers; performing a first implantation of dopants aligned on the regions of spacers to form first lightly doped conduction regions of the transistor; and performing a second implanting of dopants to form first more strongly doped conduction regions of the transistor.

Abstract: The memory array of a memory includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A row decoder circuit supports two modes of memory circuit operation: a first mode where only one word line in the memory array is actuated during a memory read and a second mode where one word line per sub-array are simultaneously actuated during the memory read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. Both BIST and ATPG testing of the input/output circuit are supported. For BIST testing, multiple data paths between the bit line inputs and the column data output are selectively controlled to provide complete circuit testing.

Abstract: SiC-based MOSFET electronic device comprising: a solid body; a gate terminal, extending into the solid body; a conductive path, extending at a first side of the solid body, configured to be electrically couplable to a generator of a biasing voltage; a protection element of a solid-state material, coupled to the gate terminal and to the conductive path, the protection element forming an electronic connection between the gate terminal and the conductive path, and being configured to go from the solid state to a melted or gaseous state, interrupting the electrical connection, in response to a leakage current through the protection element greater than a critical threshold; a buried cavity in the solid body accommodating, at least in part, the protection element.

Abstract: An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.

Abstract: The memory array of a circuit includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A control circuit supports two modes of circuit operation: a first mode where only one word line in the memory array is actuated during a memory read and a second mode where one word line per sub-array are simultaneously actuated during the memory read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. In memory computation operations are performed in the second mode as a function of feature data and weight data stored in the memory.

Abstract: Disclosed herein is an electronic device, including a plurality of row decoders. Each row decoder includes decoder logic generating an initial word line signal and word line driver circuitry generating an inverse word line signal at an intermediate node from the initial word line signal, and generating a word line signal at a word line node from the inverse word line signal. A word line underdrive p-channel transistor has a source coupled to the intermediate node, a drain coupled to a word line underdrive sink, and a gate controlled based upon the inverse word line signal. Negative bias generation circuitry generates the negative bias voltage at a gate of the word line underdrive p-channel transistor when the initial word line signal is at a logic high, and couples the gate of the word line underdrive p-channel transistor to ground when the initial word line signal is at a logic low.

Abstract: A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.

Abstract: An electronic device includes a doped semiconductor substrate of a first conductivity type. A first doped well of a second conductivity type opposite to the first conductivity type extends into the doped semiconductor substrate from a surface thereof. A second doped well of the first conductivity type is located in the first well. A third electrically-insulating well is located in the second well. A fourth doped well of the first conductivity type is located in the third well. First, second, and third doped regions of the first conductivity type are respectively located in the doped semiconductor substrate, the second doped well and the fourth doped well. The first, second, and third doped regions have doping levels greater than a doping level of the doped semiconductor substrate. A fourth doped region the second conductivity type is located in the fourth doped well adjacent the second doped region.