Abstract: A buffer circuit including an input terminal capable of receiving an input signal and an output terminal capable of being connected to a capacitive load, including an output circuit a series connection, between two terminals of application of a power supply voltage, of a first MOS transistor, a first and a second resistor of adjustable values, and a second MOS transistor, and means for controlling said first and second transistors receiving the input signal The buffer circuit further includes means for comparing the voltage on the output terminal of the circuit with at least one threshold voltage, the comparison means being connected to said control means.

Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.

Abstract: An optical module includes a support substrate, and an optoelectronic device on the support substrate. A coupling device provides optical coupling of the optoelectronic device with an optical fiber. The coupling device is integrated in the substrate, and is a reflection device inserted into an optical path between the optoelectronic device and the optical fiber.

Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

Abstract: The invention relates to a method for the transmission of digital messages by means of the output terminals (22) of a monitoring circuit (18) which is integrated into a microprocessor (12), said digital messages being representative of first specific events which are dependent on the execution of a series of instructions by the microprocessor.

Abstract: A decoder comprises a first line placed at a first reference potential (V.sub.