Patents Assigned to STMicroelectronis (Tours) SAS
  • Publication number: 20110121407
    Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.
    Type: Application
    Filed: November 22, 2010
    Publication date: May 26, 2011
    Applicants: STMicroelectronis (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Jean-Baptiste Quoirin, Luong Viêt Phung, Nathalie Batut