Abstract: A capacitor for sensing a substrate voltage in an integrated circuit power device may be implemented by isolating a portion or segment of the metal layer that normally covers the heavily doped perimeter region typically used for electric field equalization. In conjunction, one or more portions of an isolation dielectric layer of silicon oxide are not removed from the surface of the semiconductor substrate, as is commonly done before depositing the metal layer. The portions of isolated silicon oxide which are not removed become the dielectric layer of the capacitor. Moreover, one plate of the capacitor is formed by the heavily doped perimeter region that is electrically connected to the substrate (e.g. a drain or collector region). The other plate is formed by the segment of metal isolated from the remaining metal layer defined directly over the heavily doped perimeter region.

Abstract: This invention relates to a circuit structure of the feedforward type with programmable zeroes, particularly for synthesizing time-continual filters. This structure comprises a pair of amplification cells interconnected at least one interconnection node and connected between a first signal input of a first cell and an output terminal of the second cell, each cell comprising a pair of transistors which have a conduction terminal in common and have the other conduction terminals coupled respectively to a first voltage reference through respective bias members. The structure further comprises a circuit leg connecting a node of the first cell to the output terminal and comprising a transistor which has a control terminal connected to the node of the first cell, a first conduction terminal connected to the output terminal, and a second conduction terminal coupled to a second voltage reference through a capacitor.