Abstract: The wafer scanning device causes a wafer to scan in a vacuum area and includes a holder 10 to hold a wafer, a ball screw 20 to move the holder 10 to scan, a motor 50 to drive the ball screw 20 and an integrally formed support frame 60. While the holder 10 and the ball screw 20 are installed in the vacuum area, a transmission mechanism offset from the line of travel of the ball screw 20 and the motor 50 are installed in the atmosphere. Thus the wafer scanning device improves responsiveness with respect to the scanning speed control, enhances the uniformity of the scanning speed, has the motor or the like arranged properly and achieves the tilt of a wafer in a most preferable manner.

Abstract: A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

Abstract: A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.

Abstract: The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

Abstract: The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.

Abstract: The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

Abstract: The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.

Abstract: In an ion beam line having a mechanism for scanning an ion beam by an electric field or a magnetic field or in an ion beam line having a mechanism for forming a sheet-like or a ribbon-like ion beam, electrons are confined by the use of cusp magnetic fields generated by arranging permanent magnets. In a direction intersecting a beam traveling direction and a beam scanning direction or in a direction intersecting the beam traveling direction and a beam spread direction of the sheet-like or the ribbon-like beam, the electrons are supplied to neutralize electric charges.

Abstract: A mass separation filter has a first magnet forming a first magnetic field in an orthogonal direction to a beam axis of an ion beam, a second magnet sequentially arranged with the first magnet along the beam axis, parallel with and facing the opposite direction of the first magnet, and forming a second magnetic field orthogonal to the beam axis; and a collimator wall formed within the first and second magnetic fields that forms a transfer channel from a first curved channel deflected from the first magnetic field to a second curved channel deflected by the second magnetic field in a direction the reverse of the first magnetic field. Incident ions pass through a channel inversely curved by the magnetic fields of the first and second magnets according to the mass separation filter, and it is possible to lead ions of a desired mass in the same direction as the beam axis.

Abstract: A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

Abstract: An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

Abstract: In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

Abstract: In an ion implantation method of the present invention, an ion beam extracted from an ion source is implanted into a wafer by way of a plasma shower in a transportation section on the upstream side of the wafer. The plasma shower comprised of an arc chamber and a shower tube is arranged in a resolving aperture member or in the immediate vicinity of the downstream side.

Abstract: In an ion implantation apparatus, a reduction of an energy contanimination is achieved when ions are implanted into a wafer with a low energy. A beam transportation efficiency between mutually different positions on a beam line correlates with the energy contamination of the wafer, and the beam transportation efficiency is adjusted so that the energy contamination becomes small. Since the beam transportation efficiency is obtained by measuring a beam electric current at each position, the beam transportation efficiency can be obtained before the ions are implanted into the wafer.

Abstract: A detection method of coating film thickness and an ion implantation equipment using the detection method. The detection method comprises providing on a surface of materials, such as disk (11) of a wafer support on which a coating film comprising a low conductive material, an electrical measurement sensor (18) having a coating film comprising the same material, and detecting thickness change of the coating film on the surface of the materials by irradiation with particle beams in the form of a signal from the sensor (18). The ion implantation equipment comprises an electrical measurement sensor provided on a disk and having a sample piece that forms a coating film of the same material as that of a surface coating of the disk, and means to monitor thickness change of the coating film by sensor signal from the measurement sensor.

Abstract: An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.

Abstract: In an ion beam line having a mechanism for scanning an ion beam by an electric field or a magnetic field or in an ion beam line having a mechanism for forming a sheet-like or a ribbon-like ion beam, electrons are confined by the use of cusp magnetic fields generated by arranging permanent magnets. In a direction intersecting a beam traveling direction and a beam scanning direction or in a direction intersecting the beam traveling direction and a beam spread direction of the sheet-like or the ribbon-like beam, the electrons are supplied to neutralize electric charges.

Abstract: A mass separation filter has a first magnet forming a first magnetic field in an orthogonal direction to a beam axis of an ion beam, a second magnet sequentially arranged with the first magnet along the beam axis, parallel with and facing the opposite direction of the first magnet, and forming a second magnetic field orthogonal to the beam axis; and a collimator wall formed within the first and second magnetic fields that forms a transfer channel from a first curved channel deflected from the first magnetic field to a second curved channel deflected by the second magnetic field in a direction the reverse of the first magnetic field. Incident ions pass through a channel inversely curved by the magnetic fields of the first and second magnets according to the mass separation filter, and it is possible to lead ions of a desired mass in the same direction as the beam axis.

Abstract: In an ion implantation method of the present invention, an ion beam extracted from an ion source is implanted into a wafer by way of a plasma shower in a transportation section on the upstream side of the wafer. The plasma shower comprised of an arc chamber and a shower tube is arranged in a resolving aperture member or in the immediate vicinity of the downstream side.

Abstract: An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.