Abstract: An embodiment of the invention relates to a GI-MMF with a structure for achieving widening of bandwidth in a wider wavelength range and improving manufacturing easiness of a refractive index profile in a core. In an example of the GI-MMF, a whole region of the core is doped with Ge and a part of the core is doped with P. Namely, the Ge-doped region coincides with the whole region of the core and the Ge-doped region is comprised of a partially P-doped region doped with Ge and P; and a P-undoped region doped with Ge but not intentionally doped with P.

Abstract: Provided are a core electric wire for multi-core cable that is superior in flex resistance at low temperature, and a multi-core cable employing the same. A core electric wire for multi-core cable according to an aspect of the present invention comprises a conductor obtained by twisting element wires, and an insulating layer that covers an outer periphery of the conductor, in which, in a transverse cross section of the conductor, a percentage of an area occupied by void regions among the element wires is from 5% to 20%. An average area of the conductor in the transverse cross section is preferably from 1.0 mm2 to 3.0 mm2. An average diameter of the element wires in the conductor is preferably from 40 ?m to 100 ?m, and the number of the element wires is preferably from 196 to 2,450. The conductor is preferably obtained by twisting stranded element wires obtained by twisting subsets of element wires.

Abstract: An optical fiber comprises a glass fiber having a core and a cladding with which the core is covered, and a coating resin layer with which the glass fiber is covered, the coating resin layer having a colored layer of a thickness of 10 ?m or more, wherein a change rate of a yellow index of the coating resin layer after aging due to temperature and humidity under an environment of 85° C. and 85% RH for 30 days is 5 or less per day.

Abstract: Provided are a core electric wire for a multi-core cable superior in flex resistance at low temperature, and a multi-core cable employing the same. The core electric wire for a multi-core cable according to an aspect of the present invention comprises a conductor obtained by twisting element wires, and an insulating layer covering the conductor, a principal component of the insulating layer being a copolymer of ethylene and an ?-olefin having a carbonyl group; the ?-olefin content in the copolymer being 14% to 46% by mass; and a mathematical product C*E being 0.01 to 0.9, wherein C is a linear expansion coefficient of the insulating layer at from 25° C. to ?35° C., and E is a modulus of elasticity thereof at ?35° C. Average area of the conductor in the transverse cross section is 1.0 to 3.0 mm2. Average diameter of the element wires in the conductor is 40 to 100 ?m, and number of the element wires is 196 to 2,450.

Abstract: A terminal fitting (T) connects a plurality of wires (40) by a plurality of terminal fittings being connected to end parts of the wires (40) and held in contact, and includes a wire connecting portion (10) to be connected to the end part of the wire (40), a tubular portion (11) having a tubular shape and a shaft (12) fittable inside the tubular portion (11). The terminal fittings are held in contact by fitting the tubular portion (12) and the shaft (12) together. The tubular portion (11) or the shaft (12) is provided with an arcuate portion configured to enable the rotation of each of the tubular portion and the shaft-shaped portion about an axis in a state where the tubular portion and the shaft-shaped portion are fit together.

Abstract: One of embodiments relates to an optical fiber in which an alkali metal element is efficiently doped to its core to suppress transmission loss from increasing. A mean concentration or a concentration distribution of the alkali metal element is adjusted such that 0.48 or less is obtained as an weighted value obtained by weighting a distribution of field intensity of guided light at a wavelength of 1550 nm, with respect to a radial direction distribution of a ratio ID2/I?3 of an intensity ID2 of Raman scattering light by a silica three-membered ring structure and an intensity I?3 of Raman scattering light by a Si—O stretching vibration, in a cross-sectional region having a diameter of 20 ?m.

Abstract: Provided are an electrolytic solution for sodium-ion secondary battery, the solution having sodium-ion conductivity, and including a sodium salt and a non-aqueous solvent, wherein the non-aqueous solvent includes a fluorophosphate ester and propylene carbonate, and a content of the fluorophosphate ester in the non-aqueous solvent is 5 to 50 mass %; and a sodium-ion secondary battery including the same.

Abstract: An optical fiber comprises a glass fiber, and a coating resin layer having a primary resin layer and a secondary resin layer, wherein the primary resin layer consists of a cured resin composition containing an oligomer, a monomer and a photopolymerization initiator, the oligomer is a reaction product of a specific polyol compound, a polyisocyanate compound, and a hydroxyl group-containing acrylate compound, the photopolymerization initiator includes 2,4,6-trimethylbenzoyldiphenyl phosphine and 1-hydroxycyclohexyl phenyl ketone at a mass ratio of 5:1 to 1:1, and a content of 2,4,6-trimethylbenzoyldiphenyl phosphine in the resin composition is 1.5 to 2.5% by mass.

Abstract: An electricity storage unit includes: an electricity storage device; a circuit portion on which an electronic component is mounted; a heat dissipation member that dissipates heat from the circuit portion; and a holding member that holds the electricity storage device in a state where the electricity storage device, the circuit portion, and the heat dissipation member are stacked, wherein the holding member is provided with a supporting portion that supports the electricity storage device and abuts against the heat dissipation member.

Abstract: A pressure-sensitive adhesive sheet for covering according to an embodiment of the present invention includes a non-crosslinked rubber component having a maximum peak of the molecular weight distribution in the range of 50,000 to 3,000,000, an oil component having a maximum peak of the molecular weight distribution in the range of 1,000 to 20,000, and carbon black. The content of the non-crosslinked rubber component is 25% to 65% by mass, the content of the oil component is 35% to 75% by mass, and the content of the carbon black relative to 100 parts by mass of the total of the non-crosslinked rubber component and the oil component is 1 to 40 parts by mass.

Abstract: A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.

Abstract: In a converter, the source of a first FET and the drain of a second FET are connected to one end of an inductor while the source of a third FET and the drain of a fourth FET are connected to the other end of the inductor. The sources of the first FET and the second FET are connected to each other. The cathode and the anode of a diode are connected respectively to the drain and the source of the third FET. Then, the first FET, the second FET, the third FET and the fourth FET are turned ON/OFF individually so that a voltage applied by a battery is converted. When voltage conversion is to be terminated, OFF-state of the third FET is maintained. Then, during the time that the OFF-state of the third FET is maintained, an electric current is reduced that flows from the drain of the third FET through a storage battery to the source of the fourth FET.

Abstract: Provided is a solar cell for which accurate mutual alignment between a condenser lens and a power generating element corresponding thereto can be performed. In a solar cell 23, a plurality of grid electrodes 31 each formed in a linear shape are arrayed on a light receiving surface 23a along the width direction of the light receiving surface 23a. The plurality of grid electrodes 31 include a first center grid electrode 31a forming a cross portion 34 exhibiting a center-specific geometry caused by electrodes crossing each other at the center of the light receiving surface 23a.

Abstract: A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main surface. In the second main surface of the silicon carbide layer, a trench having a depth in a direction from the second main surface toward the first main surface is provided, and the trench has a sidewall portion where a second layer and a third layer are exposed and a bottom portion, where a first layer is exposed. A position of the bottom portion of the trench in a direction of depth of the trench is located on a side of the second main surface relative to a site located closest to the first main surface in a region where the second layer and the first layer are in contact with each other, or located as deep as the site in the direction of depth.

Abstract: An insulated electrical wire that includes a conductor and an insulating layer covering a circumferential surface of the conductor, in which the insulating layer is composed of a resin composition that contains poly(4-methyl-1-pentene) as a main component and a melt mass flow rate of the poly(4-methyl-1-pentene) measured at a temperature of 300° C. and a load of 5 kg according to the 1999 edition of JIS-K 7210 is 50 g/10 min or more and 80 g/10 min or less.

Abstract: A conversion device includes: a DC bus provided between a DC power supply and an AC power supply; a first converter provided between the DC power supply and the DC bus to perform DC/DC conversion; a second converter provided between the DC bus and the AC power supply to perform DC/AC or AC/DC conversion; and a control unit configured to selectively cause the first converter and the second converter to operate within one cycle of the AC power supply, to alternately generate a part of an absolute value of an AC waveform, and a DC waveform, as voltage of the DC bus, wherein the control unit adds a compensation value in a positive direction, to a voltage target value for the DC bus, at a timing that should have corresponded to a discontinuity point where the AC waveform and the DC waveform are connected to each other.

Abstract: A process of forming a nitride semiconductor device is disclosed. The process includes steps of (a) implanting impurities into a portion of nitride semiconductor layers epitaxially grown on a substrate; (b) forming a silicon nitride (SiN) film on the nitride semiconductor layers; and (c) annealing the nitride semiconductor layers for activating the implanted impurities as covering the nitride semiconductor layers by the SiN film. The process has a feature that the SiN film shows, in a Fourier Transformation Infrared (FT-IR) spectroscopy measured before the step of annealing, absorbance peaks attributed to translational motions of a Si—H bond and an N—H bond at most 1/30 of an absorbance peak attributed to a SiN bond.

Abstract: Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

Abstract: Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

Abstract: An object of the present invention is to provide a redox flow secondary battery being low in the electric resistance and excellent in the current efficiency as well, and further having the durability. The present invention relates to an electrolyte membrane for a redox flow secondary battery, the electrolyte membrane containing an ion-exchange resin composition containing a fluorine-based polyelectrolyte polymer, and having an ion cluster diameter of 1.00 to 2.95 nm as measured in water at 25° C. by a small angle X-ray method, and to a redox flow secondary battery using the electrolyte membrane.