Abstract: An optical source that implements a wavelength tunable laser diode (t-LD) and a Mach-Zehnder (MZ) modulator within a single package is disclosed. The optical source, which outputs a modulated signal beam and a local beam of a continuous wave (CW), accompanies a control circuit mounted on several circuit boards. Only one of the circuit boards is rigidly mounted on the housing of the optical source. Rest of the circuit boards is moderately fixed to the housing through the rigidly fixed circuit board to suppress stresses caused in the housing and the circuit boards when the optical source is rigidly installed in the host system.

Abstract: A shielded cable includes two signal wires, each of which having a signal conductor covered with an insulator, and a shield conductor having a metal clad resin tape spirally wrapped around the two signal wires in a lump. The insulator is configured so that a section thereof is to be deformable by an external force. A residual diameter ratio of the signal wire is 80% or greater and 95% or less when load of 1 kg is applied to the signal wire for 30 minutes.

Abstract: An MCF of the present embodiment has eight or more cores. A diameter of a common cladding is not more than 126 ?m. Optical characteristics of each core are as follows: a TL at a predetermined wavelength of 1310 nm is not more than 0.4 dB/km; an MFD at the predetermined wavelength is from 8.0 ?m to 10.1 ?m; a BL in a BR of not less than 5 mm or in the BR of not less than 3 mm and, less than 5 mm is not more than 0.25 dB/turn at the predetermined wavelength; ?0 is from 1300 nm to 1324 nm; ?cc is not more than 1260 nm; an XT or XTs at the predetermined wavelength is not more than 0.001/km.

Abstract: A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer having a main surface, the main surface being provided with a trench which has a bottom portion and a sidewall inclined with respect to the main surface; a gate insulating film covering each of the bottom portion and the sidewall; a gate electrode provided at least on the gate insulating film; and an upper insulating film provided on the main surface and having a part which protrudes into the trench.

Abstract: Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.

Abstract: A silicon carbide epitaxial layer includes: a first impurity region; a second impurity region; and a third impurity region. A gate insulating film is in contact with the first impurity region, the second impurity region, and the third impurity region. A groove portion is formed in a surface of the first impurity region, the surface being in contact with the gate insulating film, the groove portion extending in one direction along the surface, a width of the groove portion in the one direction being twice or more as large as a width of the groove portion in a direction perpendicular to the one direction, a maximum depth of the groove portion from the surface being not more than 10 nm.

Abstract: A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

Abstract: An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving an electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.

Abstract: A hard material which, when used as a material of a sintered material, makes it possible to obtain a sintered material with excellent abrasion resistance, a sintered material, a cutting tool including the sintered material, a method for manufacturing the hard material and a method for manufacturing the sintered material are provided. The hard material contains aluminum, nitrogen, and at least one element selected from the group consisting of titanium, chromium, and silicon, and has a cubic rock salt structure.

Abstract: A ballast water treatment system includes an ultraviolet irradiation device which irradiates ballast water flowing through a treatment line (a pipe) with ultraviolet rays, and a control unit. The ultraviolet irradiation device includes a light source which emits ultraviolet rays, and an illuminance sensor sensing an illuminance of ultraviolet rays received by the ballast water. The control unit controls the ultraviolet irradiation device to maintain at a prescribed dose a dose calculated using an illuminance sensed by the illuminance sensor and a flow rate of ballast water which flows through the ultraviolet irradiation device. When the sensed dose cannot be maintained at the prescribed dose by controlling the ultraviolet irradiation device, the control unit reduces a treatment flow rate of the ballast water which flows through the treatment line.

Abstract: A pleated filter includes a filter base having folds that repeatedly form mountains and valleys and having a cylindrical shape whose axial direction is a ridge line direction of the folds. The pleated filter includes, in a valley projecting to the inside of the cylindrical shape, a bonded reinforcing portion extending in the ridge line direction of the folds.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate and a gate electrode. The silicon carbide substrate includes a first source region and a second source region, a first body region, a second body region, a first drift region, a second drift region, a third drift region, and a first connection region. The first connection region is provided to include a first intersection and a second intersection, the first intersection being an intersection of a straight line along a first straight-line portion and a straight line along a second straight-line portion, the second intersection being an intersection of a straight line along a third straight-line portion and a straight line along a fourth straight-line portion, and the first connection region has a second conductivity type.

Abstract: It is aimed to smoothly connect connectors by absorbing assembling variations between the connectors. A first spring piece (24) and a pair of second spring pieces (27) are deflectably provided in a holder portion (H) to resiliently sandwich a first connector (6) in a Y-axis direction. The second spring pieces (27) are formed with upper receiving surfaces (29) symmetrically inclined along an X-axis direction so that resilient forces act on both receiving portions (18) of the first connector (6) toward a center axis along the X-axis direction. Further, the first connector (6) is held in a state displaceable also in a Z-axis direction in the holder portion (H). This causes the first connector (6) to be held at a reference position and held in a three-dimensionally displaceable state.

Abstract: It is an object of the present invention to ensure a high water-stopping property of a wire harness including a waterproofing connector section that is molded from a resin, by suppressing a variation in the outer size of a seal section of the connector section. The connector section is made from a first synthetic resin that is insert-molded with a part of a terminal fitting of the terminated electric cable used as an insert section. A water-stopping section is made from a second synthetic resin that is insert-molded with a section extending from a part of the terminal fitting to an insulation coating of the terminated electric cable used as an insert section. The seal section is made from the second synthetic resin that is insert-molded with a part of the connector section used as an insert section. The second synthetic resin is softer than the first synthetic resin.

Abstract: A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.

Abstract: Provided is a power conversion device that converts power between DC units and three-phase AC. A first-phase conversion device, a second-phase conversion device, and a third-phase conversion device each include a DC/DC conversion circuit and a single-phase power conversion circuit. For each of the first-phase conversion device, the second-phase conversion device, and the third-phase conversion device, when an absolute value of a voltage target value for the AC exceeds DC voltage of each DC unit, a control unit causes the DC/DC conversion circuit to operate to achieve the absolute value of the voltage target value and causes the single-phase power conversion circuit to only perform necessary polarity inversion, and when the absolute value of the voltage target value is smaller than the DC voltage, the control unit stops operation of the DC/DC conversion circuit and causes the single-phase power conversion circuit to operate to achieve the voltage target value.

Abstract: A metal nanoparticle dispersion for forming a metal coating film by application and sintering contains metal nanoparticles having an average particle size of 200 nm or less and a solvent used to disperse the metal nanoparticles. The metal nanoparticle dispersion further contains a water soluble resin. The amount of the water soluble resin contained is preferably 0.1 parts by mass or more and 10 parts by mass or less per 100 parts by mass of the metal nanoparticles.

Abstract: An optical transceiver that installs an optical modulator with the Mach-Zehnder type and made of primarily semiconductor materials, and an Erbium Doped Fiber Amplifier (fiber amplifier) is disclosed. The fiber amplifier and the MZ modulator, in addition to a wavelength tunable laser diode, an intelligent coherent receiver, and a polarization maintaining splitter, are installed within a compact case following the standard of CFP2. The fiber amplifier provides a wavelength tunable filter that passes light amplified by the fiber amplifier but eliminates amplified stimulated emission in regions out of the wavelength band of the light.

Abstract: Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.

Abstract: A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated from the first impurity region by the well region. A first main surface includes a first region in contact with a channel region, and a second region different from the first region. A silicon-containing material is formed on the second region. A first silicon dioxide region is formed on the first region. A second silicon dioxide region is formed by oxidizing the silicon-containing material. A gate runner is electrically connected to a gate electrode and formed in a position facing the second silicon dioxide region. Consequently, a silicon carbide semiconductor device capable of achieving improved insulation performance between the gate runner and the substrate while the surface roughness of the substrate is suppressed, and a method of manufacturing the same can be provided.