Abstract: The invention relates to method and apparatus for measuring a diameter of a single crystal wherein growth portions including a shoulder portion and the following can be accurately measured with respect to their diameter. The method for the measurement includes the steps of causing an oscillation center of a single crystal being grown according to the Czochralski method while oscillating and a scanning line of a one-dimensional CCD camera to coincide with each other, and deciding a diameter of the single crystal from all the images measured with the one-dimensional CCD camera over a measuring time which is longer than an oscillation cycle of the single crystal.

Abstract: This is a method for growing by pulling single crystals 6 using CZ process from material melt 5 to which cusp magnetic field is applied. Inside diameter U of the crucible 3 that contains the material melt 5 is (Y+140 mm) or larger and less than 3Y, where Y stands for outside diameter of the single crystal 6. When cusp magnetic field is applied, high pulling yield is maintained even if the inside diameter U of the crucible is small. Oxygen yield and dislocation free yield are improved by reducing inside diameter U of the crucible. As a result, the yield of manufacturing single crystals 6 is improved.

Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (° C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.

Abstract: In the work crystal orientation adjusting method, the crystal orientations of a work 22 in the rotational direction and in the horizontal direction thereof are measured by an orientation measuring device 76. In accordance with the measured value of the crystal orientation of the work 22 in the rotational direction, the work 22 is rotated about the axis thereof to thereby adjust the crystal orientation of the work 22 in the rotational direction. On the outer surface of the work 22, there are put marks M1 and M2 indicating reference positions for adhesion of an auxiliary plate B which is used to cut the work 22. The auxiliary plate B is adhered to the outer peripheral surface of the work 22 based on the marks M1 and M2. A work mounting plate 53 is mounted onto a support base 40 to thereby support the work 22 on the support base 40.

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyramidal configuration, a high loading density is achieved.

Abstract: A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so asto reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.

Abstract: This invention provides color development methods of metallic titanium used for manufacture of black titanium or titanium tinted in other chromatic colors. In one method, metallic titanium is treated with an alkali solution. It enables colored titanium rich in color variation with high efficiency, irrespective of the material configuration. The brightness of black is further reduced by conducting a nitriding process, after this process. In another method, the metallic titanium is oxidized after forming the titanium nitride film on its surface by nitriding it. Black titanium is produced with low brightness. In this way, colored titanium with various tones is produced. Moreover, the close adherence of the film with colors developed thereon is enhanced.

Abstract: A method for melting a silicon starting material can suppress silica (SiO2) from melting out from a quartz crucible wherein the silicon starting material is melted and can provide a high-quality silicon single crystal in a high yield. The growth method comprises melting the silicon starting material charged in the crucible while applying thereto a static magnetic field, contacting a seed crystal to a surface of the silicon melt, and pulling the seed crystal upwardly to solidify the contacted melt. The silicon starting material charged in the crucible, which is under melting, is applied with a static magnetic field such as a Cusp magnetic field, a horizontal magnetic field and/or a vertical magnetic field. The application can control heat convection occurring in the crucible during the course of the melting of the starting material, thereby obtaining a silicon single crystal having a reduced number of dislocation defects.

Abstract: An n-type wafer is provided having a <111> crystal axis in which the resistivity distribution in the surface of the wafer is uniform. The wafer is suitable for use in, e.g., a zener diode. A method is provided for growing a single crystal of n-type silicon doped with a group V element such as phosphorus using the Czochralski method or the floating zone melting (FZ) method wherein the center axis of the silicon single crystal is tilted by a tilt angle of 1-6 degrees from the <111> crystal axis. The silicon single crystal is sliced obliquely at the angle corresponding to the tilt angle to yield an n-type wafer having a <111> crystal axis.

Abstract: After whole raw material filled in a crucible is melted by plural heaters provided around the crucible, outputs of the heaters are lowered so that molten liquid is maintained at a predetermined temperature. A seed crystal is brought into contact with a surface of the molten liquid, and while a height of the surface of the molten liquid is being maintained in a heating region of a topmost heater, a pulling shaft is pulled up at a predetermined speed so that a single crystal is grown in a lower position of the seed crystal. At this time, in order that the pulled single crystal has required oxygen concentration during the pulling of the single crystal, a ratio of the output of the topmost heater to the outputs of all the heaters is set to a value calculated by R.sub.PW .gtoreq.0.88R.sub.T (R.sub.PW : output ratio of the topmost heater) based on the ratio R.sub.T of the height of the topmost heater to the height of the crucible.

Abstract: An easily attachable/detachable lid mounted container includes a container body, a lid for covering the container body, and an easy attach/detach mechanism for reliably securing the lid to the container body and for easily detaching the lid from the container body. The easy attach/detach mechanism includes: an engagement plate provided on the lid and extending toward the container body, the engagement plate being resilient and bendable; an object engagement portion, provided on the container body, for engaging, when the lid is pressed toward the container body, with the engagement plate so as to secure the lid to the container body; and separation means, provided between the engagement plate and the object engagement portion, for separating the engagement plate from the object engagement portion when the separation means is pressed toward the container body.

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: A single crystal producing apparatus to be used for raising the single crystals by a CZ method. A cylindrical portion of a main chamber of the single crystal producing apparatus can be separated from the apparatus. Hot zone components can be retained within the cylindrical portion. After the pulling up operation, the cylindrical portion is separated from the apparatus with the hot zone components being engaged with within the cylindrical portion and is carried to another chamber. In another chamber, an overhauling, reproducing and assembling operations of the hot components can be conducted. In the single crystal producing apparatus, a cylindrical portion which goes through an assembling operation of the hot zone components in another chamber is engaged with the apparatus, and the next pulling up operation is conducted. Time required to the next pulling up operation is shortened. The dust amount within the pulling up chamber is reduced.

Abstract: A cleaning equipment for semiconductor substrates, which includes a cleaning tank 2 for cleaning the semiconductor substrates and a circulation filtering device, wherein the cleaning equipment has a pump 6 and a filter unit 7 disposed in a filtering line for cleaning impurities contained in a cleaning liquid, a gas mixing device 8 having a temperature-adjusting function and which is disposed downstream of the pump 6 and the filter unit 7 for adjusting a temperature of the cleaning liquid and dissolving the gas into the cleaning liquid, and a gas-separating device 9 which is disposed downstream of the gas mixing device 8 for separating an undissolved portion of the mixed gas from the cleaning liquid.

Abstract: A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so as to reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.

Abstract: A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (.degree. C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.

Abstract: The invention relates to a method for detecting torsional oscillations among abnormal oscillations occurring during the course of pulling of a single crystal, and also to a method for manufacturing a silicon single crystal using this method. Torsional oscillations are detected by detecting seam portions of a silicon single crystal being rotated with a camera device, memorizing time intervals of the signals outputted by detection of the seam portions, calculating an average value of the time intervals, comparing a time interval of freshly outputted signals with the average value, and deciding occurrence of torsional oscillations in the single crystal when the resulting deviation exceeds a predetermined value. When this method is adopted for pulling of a silicon single crystal, the single crystal is prevented from generating a dislocation and from dropping owing to the breakage at a neck portion thereof. Thus, the silicon single crystal can be manufactured with an improved yield and with a high efficiency.

Abstract: An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.

Abstract: The present invention is designed to provide an annealing method for silicon single crystal wafers, which makes it possible to increase the number of silicon single crystal wafers processed during a single annealing process under a variety of annealing performed on silicon single crystal wafers, such as oxygen outer diffusion annealing for forming a DZ layer, annealing that generates and controls BMD for providing IG functions, and annealing that endeavors to improve and enhance GOI characteristics by eliminating wafer surface layer COP, and internal grown-in defects, and also enables the suppression of dislocation and slip in elevated temperature annealing environments. It calls for annealing to be performed by stacking up around 10 wafers, treating this group as a unit, placing this group, either horizontally or slightly inclined at an angle of roughly 0.5.about.5.degree.