Abstract: In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

Abstract: Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface of the stack is inclined at an angle ranging from 5 to 40 degrees with respect to a reference axis indicating a c-axis direction of hexagonal group III nitride. An axis normal to the plane R1 and the axis form an angle smaller than the angle an axis normal to the plane R2 and the axis form. The oxygen concentration of the channel layer is lower than 1×1017 cm?3. It becomes possible to avoid increase in carrier concentration of the channel layer caused by the oxygen addition, thereby reducing leakage current via the channel layer in the transistor.

Abstract: To provide a non-crosslinked flame-retardant resin composition possessing sufficient flame retardancy, mechanical properties, flexibility and workability, and also delivering excellent heat resistance over a long period of time as it is hard to be molten when used under high temperature environment and its material is not deteriorated even if used in contact with a vinyl chloride resin material and the like, and an insulated wire and a wiring harness using the same. The composition includes (A) a non-crosslinked base resin which contains a propylene resin containing 50 wt % or more of propylene monomer and a thermoplastic resin of which a melting point is 180° C. or more, (B) a metallic hydrate, (C) a hindered phenolic antioxidant, (D) a sulfurous antioxidant, and (E) a metallic oxide. Polymethylpentene, an imidazole compound and an oxide of zinc are preferably utilized as the thermoplastic resin, the ingredients (D) and (E), respectively.

Abstract: A water absorptive composition comprising a thermoplastic elastomer as a first component, a water-absorptive resin as a second component, and a third component selected from the group which consists of: a water-soluble resin; a hydrophilic compound selected from the group consisting of metal salt of carboxylic acid, polyhydric alcohol, amino alcohol, linear polyether, saccharide, and sugar alcohol; and a surface treating agent selected from the group consisting of sorbitan fatty acid ester, glycidyl ether of polyhydric alcohol, and silane coupling agent. The composition is suitably used for producing a water absorptive member for protecting optical fiber elements of an optical fiber cable.