Abstract: The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions.
Abstract: The invention provides a voltage regulator including a transient voltage suppressor. The transient voltage suppressor includes N first transistors and N semiconductor units. The N first transistors are coupled between a reference ground and N pads respectively, and the N transistors are controlled by a voltage on a reference power line. The N semiconductor units are coupled between the reference ground and the N pads respectively, or coupled between the reference power line and the N pads respectively. N is a positive integer.
Abstract: The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions.