Abstract: The present invention discloses a thin-film transistor structure with a three-dimensional fin-shape channel and a preparation method thereof. The preparation method includes following steps: (a) depositing and etching a bottom gate electrode on a substrate; (b) depositing a bottom dielectric layer at an upper part of a structure obtained from the step (a), and sequentially depositing a semiconductor film on the bottom dielectric layer; (c) etching the semiconductor film to obtain a fin-type channel; (d) respectively depositing an ohmic contact layer, a source electrode and a drain electrode on the semiconductor film located at both sides of the fin-shape channel, and etching; (e) depositing a top dielectric layer and a top gate electrode at an upper part of a structure obtained from the step (d); and (f) etching the top gate electrode, an completing a preparation of a thin-film transistor with a dual-gate three-dimensional fin-shape channel.
Type:
Grant
Filed:
July 30, 2016
Date of Patent:
October 1, 2019
Assignees:
SUN YAT-SEN UNIVERSITY, SUN YAT-SEN UNIVERSITY CARNEGIE MELLON UNIVERSITY SHUNDE INTERNATIONAL JOINT RESEARCH INSTITUTE
Abstract: The invention discloses a MOS transistor for suppressing generation of a photo-induced leakage current in an active channel region, and an application thereof. A fabrication process comprises: forming a source and a drain at both ends of a substrate by ion implantation, fabricating a gate oxide layer in a middle of an upper surface of the substrate; depositing a polysilicon or a metal on the gate oxide layer to form a gate; depositing an isolation layer above the gate, the source, and the drain; etching contact holes above the source and the drain to extract the source and the drain; depositing the metal on the contact holes above the source and the drain; etching the metal on the drain to isolate the source from the drain; and enabling the metal on the source to directly extend to cover the active channel region, so as to block light rays.
Type:
Application
Filed:
May 31, 2016
Publication date:
May 16, 2019
Applicants:
SUN YAT-SEN UNIVERSITY, SUN YAT-SEN UNIVERSITY CARNEGIE MELLON UNIVERSITY SHUNDE INTERNATIONAL JOINT RESEARCH INSTITUTE
Inventors:
Shaojun LIU, Ke ZHANG, Deng PENG, Heshen WANG, Weijing MO, Xi LIU, Maosen HUANG