Patents Assigned to Sundew Technologies, LLC
-
Patent number: 10890282Abstract: Face-sealed fittings are described for joining flanged tubes. These fittings utilize unique designs for pairing rings, nipples, and nuts to provide several advantages over prior art designs. Face-sealed fittings provided herein are symmetrical and genderless, and are field attachable/removable over previously welded glands. Moreover, they are torque free and have footprints comparable or smaller than legacy assemblies.Type: GrantFiled: February 2, 2015Date of Patent: January 12, 2021Assignee: Sundew Technologies, LLCInventors: Ofer Sneh, Lee E. Vestman, Steven F. Ruhnke
-
Patent number: 10465817Abstract: An apparatus is described for controlling a flow of a fluid therethrough while the apparatus is connected to a source of control fluid. The apparatus includes an input, a valve seat, a diaphragm, an output, and a diaphragm control space. The diaphragm control space is partially defined by the diaphragm, and includes a control fluid inlet and a control fluid outlet. The apparatus is operative to independently control a flow of control fluid into the diaphragm control space through the control fluid inlet and a flow of control fluid out of the diaphragm control space through the control fluid outlet. A deflection of the diaphragm in relation to the valve seat is responsive to a pressure of the control fluid in the diaphragm control space. The deflection of the diaphragm in relation to the valve seat is operative to control a fluidic flow resistance between the input and the output.Type: GrantFiled: December 14, 2017Date of Patent: November 5, 2019Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
-
Patent number: 9909682Abstract: An apparatus is described for controlling a flow of a fluid therethrough while the apparatus is connected to a source of control fluid. The apparatus includes an input, a valve seat, a diaphragm, an output, and a diaphragm control space. The diaphragm control space is partially defined by the diaphragm, and includes a control fluid inlet and a control fluid outlet. The apparatus is operative to independently control a flow of control fluid into the diaphragm control space through the control fluid inlet and a flow of control fluid out of the diaphragm control space through the control fluid outlet. A deflection of the diaphragm in relation to the valve seat is responsive to a pressure of the control fluid in the diaphragm control space. The deflection of the diaphragm in relation to the valve seat is operative to control a fluidic flow resistance between the input and the output.Type: GrantFiled: December 26, 2014Date of Patent: March 6, 2018Assignee: Sundew Technologies LLCInventor: Ofer Sneh
-
Patent number: 9181097Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.Type: GrantFiled: February 2, 2010Date of Patent: November 10, 2015Assignee: Sundew Technologies, LLCInventors: Ofer Sneh, Jereld L. Winkler
-
Publication number: 20140137802Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.Type: ApplicationFiled: January 27, 2014Publication date: May 22, 2014Applicant: SUNDEW TECHNOLOGIES LLCInventor: Ofer Sneh
-
Patent number: 8673394Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.Type: GrantFiled: May 6, 2009Date of Patent: March 18, 2014Assignee: Sundew Technologies LLCInventor: Ofer Sneh
-
Patent number: 8451582Abstract: Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.Type: GrantFiled: July 20, 2005Date of Patent: May 28, 2013Assignee: Sundew Technologies, LLCInventors: Anat Sneh, Ofer Sneh
-
Publication number: 20120321910Abstract: A method for depositing one or more materials on a substrate comprises placing at least a portion of the substrate proximate to a plurality of deposition modules such that the substrate and each of the plurality of deposition modules define a respective one of a plurality of process spaces therebetween. Each of the plurality of process spaces is in fluidic communication with one or more of a plurality of draw gas injection chambers. Subsequently, a first precursor gas and a second precursor gas are separately injected into the plurality of process spaces while injecting a draw gas into the plurality of draw gas injection chambers, and a sweep gas is injected into the plurality of process spaces while injecting substantially no draw gas into the plurality of draw gas injection chambers.Type: ApplicationFiled: January 11, 2011Publication date: December 20, 2012Applicant: SUNDEW TECHNOLOGIES LLCInventor: Ofer Sneh
-
Patent number: 8252116Abstract: A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.Type: GrantFiled: February 4, 2010Date of Patent: August 28, 2012Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
-
Patent number: 8083205Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.Type: GrantFiled: May 19, 2010Date of Patent: December 27, 2011Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
-
Publication number: 20110311725Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.Type: ApplicationFiled: February 2, 2010Publication date: December 22, 2011Applicant: SUNDEW TECHNOLOGIES LLCInventors: Ofer Sneh, Jereld L. Winkler
-
Publication number: 20110310526Abstract: Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.Type: ApplicationFiled: September 1, 2011Publication date: December 22, 2011Applicant: Sundew Technologies, LLCInventors: Anat Sneh, Ofer Sneh
-
Patent number: 8012261Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: GrantFiled: November 6, 2009Date of Patent: September 6, 2011Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
-
Publication number: 20110206909Abstract: A coating is formed by depositing the coating on a metallic feature at a deposition temperature. Subsequently, the deposited coating and the metallic feature are cooled below the deposition temperature. The coating is chosen such that this cooling step causes the coating to induce a tensile stress in the metallic feature sufficient to substantially suppress the growth of metallic whiskers on that metallic feature. The coating thereby acts to suppress the growth of metallic whiskers.Type: ApplicationFiled: October 29, 2009Publication date: August 25, 2011Applicant: SUNDEW TECHNOLOGIES LLCInventor: Ofer Sneh
-
Publication number: 20110070141Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.Type: ApplicationFiled: May 6, 2009Publication date: March 24, 2011Applicant: Sundew Technologies LLCInventor: Ofer Sneh
-
Publication number: 20100301011Abstract: A sub-atmospheric downstream pressure control apparatus includes a first flow restricting element (FRE); a pressure control chamber (PCC) located in serial fluidic communication downstream from the first FRE; a second FRE located in serial fluidic communication downstream from the PCC; a gas source; and a flow controlling device in serial fluidic communication downstream from the gas source and upstream from the PCC.Type: ApplicationFiled: August 12, 2010Publication date: December 2, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
-
Publication number: 20100224804Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.Type: ApplicationFiled: May 19, 2010Publication date: September 9, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
-
Publication number: 20100166957Abstract: A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.Type: ApplicationFiled: February 4, 2010Publication date: July 1, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
-
Patent number: 7744060Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.Type: GrantFiled: October 18, 2004Date of Patent: June 29, 2010Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
-
Publication number: 20100129548Abstract: Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation.Type: ApplicationFiled: January 27, 2010Publication date: May 27, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh