Patents Assigned to Sundew Technologies, LLC
  • Patent number: 10890282
    Abstract: Face-sealed fittings are described for joining flanged tubes. These fittings utilize unique designs for pairing rings, nipples, and nuts to provide several advantages over prior art designs. Face-sealed fittings provided herein are symmetrical and genderless, and are field attachable/removable over previously welded glands. Moreover, they are torque free and have footprints comparable or smaller than legacy assemblies.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: January 12, 2021
    Assignee: Sundew Technologies, LLC
    Inventors: Ofer Sneh, Lee E. Vestman, Steven F. Ruhnke
  • Patent number: 10465817
    Abstract: An apparatus is described for controlling a flow of a fluid therethrough while the apparatus is connected to a source of control fluid. The apparatus includes an input, a valve seat, a diaphragm, an output, and a diaphragm control space. The diaphragm control space is partially defined by the diaphragm, and includes a control fluid inlet and a control fluid outlet. The apparatus is operative to independently control a flow of control fluid into the diaphragm control space through the control fluid inlet and a flow of control fluid out of the diaphragm control space through the control fluid outlet. A deflection of the diaphragm in relation to the valve seat is responsive to a pressure of the control fluid in the diaphragm control space. The deflection of the diaphragm in relation to the valve seat is operative to control a fluidic flow resistance between the input and the output.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: November 5, 2019
    Assignee: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Patent number: 9909682
    Abstract: An apparatus is described for controlling a flow of a fluid therethrough while the apparatus is connected to a source of control fluid. The apparatus includes an input, a valve seat, a diaphragm, an output, and a diaphragm control space. The diaphragm control space is partially defined by the diaphragm, and includes a control fluid inlet and a control fluid outlet. The apparatus is operative to independently control a flow of control fluid into the diaphragm control space through the control fluid inlet and a flow of control fluid out of the diaphragm control space through the control fluid outlet. A deflection of the diaphragm in relation to the valve seat is responsive to a pressure of the control fluid in the diaphragm control space. The deflection of the diaphragm in relation to the valve seat is operative to control a fluidic flow resistance between the input and the output.
    Type: Grant
    Filed: December 26, 2014
    Date of Patent: March 6, 2018
    Assignee: Sundew Technologies LLC
    Inventor: Ofer Sneh
  • Patent number: 9181097
    Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: November 10, 2015
    Assignee: Sundew Technologies, LLC
    Inventors: Ofer Sneh, Jereld L. Winkler
  • Publication number: 20140137802
    Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.
    Type: Application
    Filed: January 27, 2014
    Publication date: May 22, 2014
    Applicant: SUNDEW TECHNOLOGIES LLC
    Inventor: Ofer Sneh
  • Patent number: 8673394
    Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.
    Type: Grant
    Filed: May 6, 2009
    Date of Patent: March 18, 2014
    Assignee: Sundew Technologies LLC
    Inventor: Ofer Sneh
  • Patent number: 8451582
    Abstract: Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: May 28, 2013
    Assignee: Sundew Technologies, LLC
    Inventors: Anat Sneh, Ofer Sneh
  • Publication number: 20120321910
    Abstract: A method for depositing one or more materials on a substrate comprises placing at least a portion of the substrate proximate to a plurality of deposition modules such that the substrate and each of the plurality of deposition modules define a respective one of a plurality of process spaces therebetween. Each of the plurality of process spaces is in fluidic communication with one or more of a plurality of draw gas injection chambers. Subsequently, a first precursor gas and a second precursor gas are separately injected into the plurality of process spaces while injecting a draw gas into the plurality of draw gas injection chambers, and a sweep gas is injected into the plurality of process spaces while injecting substantially no draw gas into the plurality of draw gas injection chambers.
    Type: Application
    Filed: January 11, 2011
    Publication date: December 20, 2012
    Applicant: SUNDEW TECHNOLOGIES LLC
    Inventor: Ofer Sneh
  • Patent number: 8252116
    Abstract: A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: August 28, 2012
    Assignee: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Patent number: 8083205
    Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.
    Type: Grant
    Filed: May 19, 2010
    Date of Patent: December 27, 2011
    Assignee: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Publication number: 20110311725
    Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.
    Type: Application
    Filed: February 2, 2010
    Publication date: December 22, 2011
    Applicant: SUNDEW TECHNOLOGIES LLC
    Inventors: Ofer Sneh, Jereld L. Winkler
  • Publication number: 20110310526
    Abstract: Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.
    Type: Application
    Filed: September 1, 2011
    Publication date: December 22, 2011
    Applicant: Sundew Technologies, LLC
    Inventors: Anat Sneh, Ofer Sneh
  • Patent number: 8012261
    Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: September 6, 2011
    Assignee: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Publication number: 20110206909
    Abstract: A coating is formed by depositing the coating on a metallic feature at a deposition temperature. Subsequently, the deposited coating and the metallic feature are cooled below the deposition temperature. The coating is chosen such that this cooling step causes the coating to induce a tensile stress in the metallic feature sufficient to substantially suppress the growth of metallic whiskers on that metallic feature. The coating thereby acts to suppress the growth of metallic whiskers.
    Type: Application
    Filed: October 29, 2009
    Publication date: August 25, 2011
    Applicant: SUNDEW TECHNOLOGIES LLC
    Inventor: Ofer Sneh
  • Publication number: 20110070141
    Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.
    Type: Application
    Filed: May 6, 2009
    Publication date: March 24, 2011
    Applicant: Sundew Technologies LLC
    Inventor: Ofer Sneh
  • Publication number: 20100301011
    Abstract: A sub-atmospheric downstream pressure control apparatus includes a first flow restricting element (FRE); a pressure control chamber (PCC) located in serial fluidic communication downstream from the first FRE; a second FRE located in serial fluidic communication downstream from the PCC; a gas source; and a flow controlling device in serial fluidic communication downstream from the gas source and upstream from the PCC.
    Type: Application
    Filed: August 12, 2010
    Publication date: December 2, 2010
    Applicant: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Publication number: 20100224804
    Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.
    Type: Application
    Filed: May 19, 2010
    Publication date: September 9, 2010
    Applicant: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Publication number: 20100166957
    Abstract: A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint.
    Type: Application
    Filed: February 4, 2010
    Publication date: July 1, 2010
    Applicant: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Patent number: 7744060
    Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: June 29, 2010
    Assignee: Sundew Technologies, LLC
    Inventor: Ofer Sneh
  • Publication number: 20100129548
    Abstract: Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation.
    Type: Application
    Filed: January 27, 2010
    Publication date: May 27, 2010
    Applicant: Sundew Technologies, LLC
    Inventor: Ofer Sneh