Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
Type:
Grant
Filed:
May 9, 2013
Date of Patent:
May 12, 2015
Assignees:
SunEdision Semiconductor Limited (UEN201334164H), Kansas State University Research Foundation
Inventors:
Michael R. Seacrist, Vikas Berry, Phong Tuan Nguyen