Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.
Type:
Grant
Filed:
May 20, 2014
Date of Patent:
June 14, 2016
Assignees:
Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Colaboration
Inventors:
Hwansoo Suh, Insu Jeon, Min-woo Kim, Young-jae Song, Min Wang, Qinke Wu, Sung-joo Lee, Sung-kyu Jang, Seong-jun Jung