Abstract: The present application relates to the technical field of semiconductor, and in particular to an inverter. The inverter provided by the present application includes a substrate, a discrete device and a heat conducting component. The discrete device and the heat conducting component are both arranged on the substrate. A part of the heat conducting component is located in an area of the substrate where the discrete device is provided, and another part of the heat conducting component is located in an area of the substrate where the discrete device is not provided. The heat conducting component may rapidly transfer the heat of the overheated area of the substrate where the discrete device is mounted to the less hot area of the substrate, and promote the heat generated by the discrete device to spread evenly to the substrate.

Abstract: An overvoltage absorption circuit and a single-phase HERIC topology are provided. The overvoltage absorption circuit is applicable to the single-phase HERIC topology, and includes a clamping capacitor, an absorption resistor, a first diode, and a second diode. One terminal of the clamping capacitor and one terminal of the absorption resistor are each connected to collectors of two cross transistors in the single-phase HERIC topology. The other terminal of the clamping capacitor and the other terminal of the absorption resistor are each connected to the anodes of the first diode and the second diode. The cathode of the first diode is connected to the emitter of one of the two cross transistors. The cathode of the second diode is connected to the emitter of the other of the two cross transistors.

Abstract: The present application relates to the technical field of semiconductor, and in particular to an inverter. The inverter provided by the present application includes a substrate, a discrete device and a heat conducting component. The discrete device and the heat conducting component are both arranged on the substrate. A part of the heat conducting component is located in an area of the substrate where the discrete device is provided, and another part of the heat conducting component is located in an area of the substrate where the discrete device is not provided. The heat conducting component may rapidly transfer the heat of the overheated area of the substrate where the discrete device is mounted to the less hot area of the substrate, and promote the heat generated by the discrete device to spread evenly to the substrate.

Abstract: An overvoltage absorption circuit and a single-phase HERIC topology are provided. The overvoltage absorption circuit is applicable to the single-phase HERIC topology, and includes a clamping capacitor, an absorption resistor, a first diode, and a second diode. One terminal of the clamping capacitor and one terminal of the absorption resistor are each connected to collectors of two cross transistors in the single-phase HERIC topology. The other terminal of the clamping capacitor and the other terminal of the absorption resistor are each connected to the anodes of the first diode and the second diode. The cathode of the first diode is connected to the emitter of one of the two cross transistors. The cathode of the second diode is connected to the emitter of the other of the two cross transistors.

Abstract: A medium-high voltage energy conversion system, and a control method and a controller therefor are provided. In the control method, an operation state of the medium-high voltage energy conversion system is acquired. In a case that the system is in a normal operation state, the system is controlled to operate in a first direct circuit current source mode. In a case that the system is in a first fault state in which a direct current grid voltage drops, the system is controlled to operate in a direct current voltage source mode. In a case that the system is in a second fault state in which a direct current grid voltage is in an overvoltage state, the system is controlled to operate in a second direct circuit current source mode.