Patents Assigned to Sunpreme, Ltd.
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Publication number: 20170162744Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.Type: ApplicationFiled: February 11, 2017Publication date: June 8, 2017Applicant: SUNPREME, LTD.Inventors: Ashok Sinha K., Roman Milter, Robert Broesler
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Publication number: 20160111589Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.Type: ApplicationFiled: May 12, 2015Publication date: April 21, 2016Applicant: SUNPREME, LTD.Inventors: Ashok Sinha, Roman Milter, Robert Broesler
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Publication number: 20130252427Abstract: Substrates for solar cells are prepared by the reverse of the standard RCA clean. The substrates are first cleaned in RCA-2 solution and then in RCA-1 solution. A pyramids rounding step using HF/HNO3 solution is inserted between the two RCA clean procedures. This solves all the issues relating to surface contaminations and sharp areas. It also avoids the stain layer on the surface to some extent by RCA-1 treatment. A thin layer of amorphous or micro-crystalline intrinsic silicon may be deposited to passivate the surface.Type: ApplicationFiled: March 26, 2012Publication date: September 26, 2013Applicant: SUNPREME, LTD.Inventor: Guanghua Song
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Publication number: 20130125968Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.Type: ApplicationFiled: November 18, 2011Publication date: May 23, 2013Applicant: SUNPREME, LTD.Inventors: Ashok Kumar Sinha, Roman Milter, Robert Broesler
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Publication number: 20110220201Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: ApplicationFiled: May 14, 2011Publication date: September 15, 2011Applicant: SUNPREME, LTD.Inventor: Ashok Sinha
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Publication number: 20110223708Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: ApplicationFiled: May 16, 2011Publication date: September 15, 2011Applicant: SUNPREME, LTDInventor: Ashok Sinha
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Publication number: 20110207259Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: ApplicationFiled: May 3, 2011Publication date: August 25, 2011Applicant: SUNPREME, LTD.Inventor: Ashok Sinha
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Patent number: 7960644Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: GrantFiled: November 7, 2008Date of Patent: June 14, 2011Assignee: Sunpreme, Ltd.Inventor: Ashok Sinha
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Patent number: 7956283Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: GrantFiled: November 7, 2008Date of Patent: June 7, 2011Assignee: Sunpreme, Ltd.Inventor: Ashok Sinha
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Patent number: 7951640Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: GrantFiled: December 2, 2009Date of Patent: May 31, 2011Assignee: Sunpreme, Ltd.Inventor: Ashok Sinha
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Publication number: 20100317146Abstract: Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.Type: ApplicationFiled: August 24, 2010Publication date: December 16, 2010Applicant: SUNPREME, LTD.Inventors: Ashok Sinha, Wen Ma
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Publication number: 20100116335Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.Type: ApplicationFiled: December 2, 2009Publication date: May 13, 2010Applicant: SUNPREME, LTD.Inventor: Ashok Sinha