Patents Assigned to Sunric Co., Ltd
  • Patent number: 7732012
    Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: June 8, 2010
    Assignees: Shin-Etsu Film Co., Ltd, Sunric Co., Ltd
    Inventors: Tatsuhiko Hongu, Yasuhiro Kato, Hiroshi Hagimoto
  • Publication number: 20080069755
    Abstract: [Problems]Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. [Means for solution]The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re-W, W-Ta, Zr-Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.
    Type: Application
    Filed: May 16, 2005
    Publication date: March 20, 2008
    Applicants: SHIN-ETSU FILM CO., LTD., SUNRIC CO., LTD.
    Inventors: Tatsuhiko Hongu, Yasuhiro Kato, Hiroshi Hagimoto
  • Publication number: 20060249200
    Abstract: A polycrystalline silicon material for solar power generation is polycrystalline silicon obtained by supplying a raw material silane gas to a red-hot silicon seed rod in a sealed reactor at high temperature to thereby thermally decompose or hydrogen-reduce the raw material silane gas. The polycrystalline silicon has a p-type or n-type conductivity, a resistivity of 3 to 500 ?cm, and a lifetime of 2 to 500 ?sec and is used for manufacturing a silicon wafer for solar power generation.
    Type: Application
    Filed: September 15, 2005
    Publication date: November 9, 2006
    Applicants: Sunric Co., Ltd., Shin-Etsu Film Co., Ltd.
    Inventors: Yasuhiro Kato, Hiroshi Hagimoto, Tatsuhiko Hongu