Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.
Type:
Grant
Filed:
May 16, 2005
Date of Patent:
June 8, 2010
Assignees:
Shin-Etsu Film Co., Ltd, Sunric Co., Ltd
Abstract: [Problems]Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. [Means for solution]The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re-W, W-Ta, Zr-Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.
Type:
Application
Filed:
May 16, 2005
Publication date:
March 20, 2008
Applicants:
SHIN-ETSU FILM CO., LTD., SUNRIC CO., LTD.
Abstract: A polycrystalline silicon material for solar power generation is polycrystalline silicon obtained by supplying a raw material silane gas to a red-hot silicon seed rod in a sealed reactor at high temperature to thereby thermally decompose or hydrogen-reduce the raw material silane gas. The polycrystalline silicon has a p-type or n-type conductivity, a resistivity of 3 to 500 ?cm, and a lifetime of 2 to 500 ?sec and is used for manufacturing a silicon wafer for solar power generation.
Type:
Application
Filed:
September 15, 2005
Publication date:
November 9, 2006
Applicants:
Sunric Co., Ltd., Shin-Etsu Film Co., Ltd.