Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
Type:
Grant
Filed:
June 25, 2015
Date of Patent:
February 5, 2019
Assignees:
NEWSOUTH INNOVATIONS PTY LIMITED, SUNTECH POWER INTERNATIONAL LTD.
Inventors:
Alison Maree Wenham, Ziv Hameiri, Jing Jia Ji, Ly Mai, Zhengrong Shi, Budi Tjahjono, Stuart Ross Wenham
Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
Type:
Application
Filed:
June 25, 2015
Publication date:
November 5, 2015
Applicants:
Suntech Power International Ltd., NewSouth Innovations Pty Limited
Inventors:
Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
Type:
Application
Filed:
February 11, 2010
Publication date:
May 24, 2012
Applicants:
Suntech Power International Ltd., New South Innovations Pty Limited
Inventors:
Alison Maree Wenham, Ziv Hameri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham