Abstract: A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

Abstract: An isolation valve is preferably applied to the semiconductor industry for sealing a process vessel and also operates effectively at plus-atmospheric pressures. A double containment gate valve assembly includes a housing and a movable head assembly within the housing. The housing includes a first access opening and a second access opening. The head assembly is configurable into a first position where an access path through the first and second access openings is clear, and a second position where the access path is blocked.

Abstract: An apparatus is disclosed for performing high-pressure processing of a workpiece having a top face and a bottom face. The apparatus comprises a processing chamber and a holder for securing the workpiece within the processing chamber so that a substantial portion of the top face and a substantial portion of the bottom face is exposed to a processing material introduced into the processing chamber. In one embodiment, the holder comprises an upper segment and a lower segment. The lower segment contacts the workpiece at or near an edge of the workpiece, thus supporting the workpiece in a first vertical direction and securing it in a horizontal plane. The upper segment contacts the workpiece at or near an edge of the workpiece, securing it in a second vertical direction.

Abstract: A method of removing a material from an oxide surface of a substrate, where the material is selected from the group consisting of photoresist, photoresist residue, etch residue, and a combination thereof, comprises first and second steps. The first step comprises maintaining a supercritical fluid, a carrier solvent, a tetra-organic ammonium fluoride, and HF in contact with the substrate until the material separates from the oxide surface, thereby forming separated material. The second step comprises removing the separated material from the vicinity of the substrate.

Abstract: A vacuum chuck for holding a semiconductor wafer during supercritical processing comprising: a substantially smooth wafer holding region for holding the semiconductor wafer; a vacuum port for applying vacuum to a portion of the wafer holding region; and a material applied between the semiconductor wafer and the wafer holding region, the material being conformable to provide substantially intimate contact between the surface of the semiconductor wafer and the wafer holding region. The material is preferably a polymer, monomer or any other suitable material is contemplated. The vacuum chuck further comprising a vacuum region configured within the wafer holding region, wherein the vacuum region is coupled to the vacuum port.

Abstract: A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a sealing means that tightly holds the lower element to the upper element to define a processing volume that is maintained using the minimum pressure necessary. The processing chamber comprises a plate having a first face that forms the processing volume and a second, opposing face that forms a seal-energizing cavity. In one embodiment, a surface area of the first face is smaller than a surface area of the second face. When the same pressure is applied against both the first face and the second face, the force on the second face is greater than the force on the first face, resulting in a sealing force exceeding a processing force generated within the processing volume.

Abstract: A vacuum chuck for holding a semiconductor wafer during high pressure, preferably supercritical, processing comprising: a wafer holding region for holding the wafer; a vacuum region for applying vacuum to a surface of the wafer, the vacuum region within the wafer holding region; and a material, preferably sintered material, applied within the vacuum region, the material configurable to provide a uniform surface between the surface of the wafer and the wafer holding region, wherein the material is configured to allow vacuum to flow therethrough. The vacuum region preferably comprises at least one vacuum groove. Alternatively, the vacuum region includes at least two vacuum grooves that are concentrically configured on the wafer holding region. The vacuum groove alternatively comprises a tapered configuration. Alternatively, a coating material is applied between the wafer surface and the substantially smooth holding region surface, whereby the coating provides a seal between the wafer and the holding region.

Abstract: An apparatus for supercritical processing of multiple workpieces comprises a transfer module, first and second supercritical processing modules, and a robot. The transfer module includes an entrance. The first and second supercritical processing modules are coupled to the transfer module. The robot is preferably located with the transfer module. In operation, the robot transfers a first workpiece from the entrance of the transfer module to the first supercritical processing module. The robot then transfers a second workpiece from the entrance to the second supercritical processing module. After the workpieces have been processed, the robot returns the first and second workpieces to the entrance of the transfer module. Alternatively, the apparatus includes additional supercritical processing modules coupled to the transfer module.

Abstract: A pressure enhanced valve comprising: a diaphragm for controlling a flow of fluid media having a first pressure entering through a first chamber, the diaphragm having a first side within the first chamber wherein the first pressure is applied to the first side; and a pressure inlet for providing a second pressure to a second side of the diaphragm in a second chamber, the second side configured opposite of the first side, wherein the first chamber and the second chamber are separately sealed from one another. The first and second pressures are any appropriate amount in relation to one another. The pressure inlet supplies internal working fluid tapped from an internal port or externally supplied fluid at the second pressure. The valve further comprising a control circuit coupled to the pressure source. The valve alternatively includes a filter element and a pressure regulator positioned within the pressure inlet.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: A method of removing polishing residue from a substrate includes placing the substrate in a pressure chamber, pressurizing the pressure chamber, and maintaining the supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate. Following removal of the polishing residue from the substrate, the pressure chamber is flushed and vented.