Abstract: The present invention provides an apparatus for acting upon charge particles in dependence upon on or more parameters including mass and/or energy and/or charged state of the particles. The apparatus includes an array of elongate magnetic poles extending longitudinally in an elongation direction of the array; an array reference surface extending in the array elongation direction and passing through the array with a magnetic pole on each side of the reference surface; a means for providing charged particles entering into or originating in the field of the magnetic pole array. The magnetic poles are configured in a plane perpendicular to the elongation direction to give parameter dependent change of direction to charged particles moving in array with a direction of movement substantially parallel to the reference surface, whereby parameter dependent selection of charged particles may be achieved by parameter dependent dispersion in a plane transverse to the reference surface.

Abstract: Apparatus (28) for implanting ions into a target element (26) comprising a circular array of hot cathode, are discharge, ion sources (29) mounted on a rotary carousel (13) or a linear mechanism. An annular rotary support (15) around the carousel supports a plurality of extraction electrodes (18). A housing (20,23) defines an outlet path (32) for the ion beam from the ion source (29). The ion beam is directed through a beam analyzer (24) and through accelaration stages (25) to means (27) for scanning beam relative to the target (26) to be implanted. The carousel (13) and the annual support (15) can both be rotated, so as to bring into cooperating relationship required combinations of ion source (29) and extraction electrode (18).

Abstract: In ion implantation apparatus, a plurality of targets on supports are presented to an ion beam. The targets are moved back and forth in reciprocatory motion through the ion beam. Each target is reversed while outside the ion beam, and the reversals of the targets are effected while another target or targets is or are moving through the beam. Where two targets are presented, the sequence is that the two target supports follow each other through the ion beam in one direction, and then follow each other through the beam in the opposite direction, each target being reversed in direction while the other is passing through the beam.

Abstract: Apparatus for presenting target elements (16) such as semi-conductor wafers to an ion beam (13) for ion implantation comprises a support rotor (19) for carrying the targets (16) on support bases (21) mounted on arms (22) extending radially from a core structure (20) of the rotor. The target elements (16) are rotated by the rotor (19) through the ion beam to produce scanning across the target elements. Each support base (21) is rotatable about the radial axis of its support arm. The rotation of the base (21) allows adjustment of the ion implantation angle. The implantation normally takes place with the target vertical and the axis of scanning rotation horizontal. Each support base (21) is also rotatable through 90.degree. to allow loading and unloading of target elements while the support base is horizontal.

Abstract: A converter 26 for converting an angularly scanned ion beam 11 into a parallel scanned ion beam comprises first and second electrodes 27 and 28 positioned adjacent each other and shaped to follow concentric part-conical surfaces. The inner part-conical electrode 27 is at beam line potential and has an entry aperture 31 for receiving the ion beam, and an exit aperture 32 through which the beam exits after being bent through 90.degree. by a potential difference across the electrodes 27 and 28. The entry beam 11 is angularly scanned by an electrostatic scanner positioned where the beam 11 passes the cone axis 33, the beam being scanned through paths lying along radii of the cone axis. The exit beam 11 emerges in a direction which is substantially parallel to the cone axis throughout the angular scanning of the entry beam.