Abstract: A GaN-series light emitting diode with high light efficiency utilizes a p-type semiconductor layer having a textured surface structure. The optical waveguide effect can be interrupted and formation of hexagonal shaped pits defect can be reduced due to the textured structure. The p-type semiconductor layer is formed on a light emitting layer and includes a p-type cladding layer, p-type transitional layer, and p-type ohmic contact layer. During the manufacturing of the GaN-series LED, the tension and compression of strain is controlled while the p-type cladding layer and the p-type transition layer are formed. Through the control of the epitaxial growth process, it is attained that the surface of the p-type semiconductor layer is textured to increase external quantum efficiency and the operation life of the light emitting device.

Abstract: The present invention relates to a structure and a manufacturing method of epitaxial layers of gallium nitride-based compound semiconductors with less dislocation densities. Surface treatment is carried out first on the surface of a substrate using reaction precursors Cp2Mg and NH3. Then a gallium nitride-based buffer layer is formed on the substrate to form a semiconductor epitaxial structure with an interface layer or an interface zone between the substrate and the buffer layer. The structure can reduce effectively the dislocation density formed in the gallium nitride-based epitaxial layer on top of the gallium nitride-based buffer layer. Thereby, high-quality epitaxial layers tend to be attained and the uniformity of the dislocation density can be enhanced.

Abstract: A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

Abstract: A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

Abstract: A flip-chip packaged SMD-type (surface-mount device) light emitting diode is provided. The light emitting diode chip is packaged in flip chip packages and is connected with an electrostatic protection device such as a transient voltage suppressor (TVS) or a Zener diode. The electrostatic protection device is attached with a substrate so as to form a flip-chip packaged SMD-type light emitting diode. The light emitting diode chip is connected to a lead frame of the substrate by a high electrical and heat conductive component thus the device needs no wire bonding. Due to the electrostatic protection device, the device has static control effect.

Abstract: A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.