Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.

Abstract: A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current IC(AF) and a post-stabilized critical current IC(PS). The IC(PS) is at least about 95% of the IC(AF).

Abstract: A superconducting article includes first and second stacked conductor segments. The first stacked conductor segment includes first and second superconductive segments and has a nominal thickness tn1. The second stacked conductor segment includes third and forth superconductive segments and has a nominal thickness tn2. The superconducting article further includes a joint region comprising a first splice connecting the first and third superconductive segments together and a second splice connecting the second and forth superconductive segments together. The first splice is adjacent to and bridged portions of the first and third superconductive segments along at least a portion of the joint region, and the second splice is adjacent to and bridged portions of the second and forth superconductive segments along at least a portion of the joint region. The joint region has a thickness tjr, wherein tjr is not greater than at least one of 1.8tn1 and 1.8tn2.

Abstract: A high temperature superconductor structure including: a substrate on which at least one buffer layer is deposited, a superconductor layer on the buffer layer, the superconducting layer composed of superconductor material that forms at least two substantially parallel superconductor filaments that continuously extend along the length of the substrate wherein at least two superconductor filaments are separated from each other by at least one insulating strip wherein the insulating strip continuously extends along the length of the substrate and is composed of insulating material with a resistivity greater than about 1 m?cm. Also disclosed are methods of producing high temperature superconductors.

Abstract: A method for forming a superconductive article is disclosed. According to one method, a substrate is provided, the substrate having an aspect ratio of not less than about 1×103, forming a buffer layer overlying the substrate, forming a superconductor layer overlying the buffer layer, and characterizing at least one of the substrate, the buffer layer and the superconductor layer by x-ray diffraction. In this regard, x-ray diffraction is carried out such that data are taken at multiple phi angles. Data acquisition at multiple phi angles permits robust characterization of the film or layer subject to characterization, and such data may be utilized for process control and/or quality control. Additional methods for forming superconductive articles, and for characterizing same with XRD are also disclosed.

Abstract: A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance.

Abstract: The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.

Abstract: A fault current limiting (FCL) article comprising a superconducting tape segment comprising a substrate, a buffer layer overlying the substrate, a high temperature superconducting (HTS) layer overlying the buffer layer, and a heat sink overlying the HTS layer, where the heat sink is comprised of a non-metal material, a thermal conductivity of not less than about 0.1 W/m-K at 20° C., an electrical resistivity of not less than about 1E-5 ?-m at 20° C., and a shunting circuit electrically connected to the superconducting tape segment.

Abstract: An MOCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.

Abstract: A superconducting article and method of fabrication are provided. The superconducting article includes a superconducting structure, which includes a superconducting conductor and multiple discrete overlay regions of higher heat capacity than the superconducting conductor. The multiple discrete overlay regions are disposed along a length of the superconducting conductor, in thermal contact with the superconducting conductor, and positioned to define a heat modulation pattern along the length of the superconducting structure. The multiple discrete overlay regions create a temperature distribution favorable to transition of the superconducting structure under load from a normal resistive state to a superconductive state by facilitating formation of a continuous superconducting path along the length of the superconducting structure.

Abstract: A superconducting article is provided which includes a superconducting tape assembly. The superconducting tape assembly includes a superconducting tape layer, having one or more superconducting tapes, and a high-permeability magnetic material layer coupled to the superconducting tape layer. The high-permeability magnetic material layer includes a high-permeability magnetic material which remains magnetically soft at a critical temperature Tc of the superconducting tape, and with presence of an ac magnetic field acting on the superconducting tape assembly, re-magnetizes to divert at least a portion of a normal component of the ac magnetic field therethrough, which reduces ac loss in the superconducting tape layer by modifying the ac magnetic field distribution within the superconducting tape of the superconducting tape layer.

Abstract: A superconducting article is provided which incorporates an early quench detection facility. The superconducting article includes a first superconductive segment and a second superconductive segment, along with a magnetic field sensor(s). The magnetic field sensor(s) is disposed to monitor relative change in strength of a net magnetic field generated by a first current passing through the first superconductive segment and a second current passing through the second superconductive segment. A relative change in strength of the net magnetic field indicates degradation of a critical quench current of the first superconductive segment or the second superconductive segment, caused for example, by formation of one or more hot-spots or quench regions in the first or second superconductive segment. The indication of degradation is thus obtained prior to complete superconductive segment quenching.

Abstract: An MOCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.

Abstract: A superconducting article includes first and second stacked conductor segments. The first stacked conductor segment includes first and second superconductive segments and has a nominal thickness tn1. The second stacked conductor segment includes third and forth superconductive segments and has a nominal thickness tn2. The superconducting article further includes a joint region comprising a first splice connecting the first and third superconductive segments together and a second splice connecting the second and forth superconductive segments together. The first splice is adjacent to and bridged portions of the first and third superconductive segments along at least a portion of the joint region, and the second splice is adjacent to and bridged portions of the second and forth superconductive segments along at least a portion of the joint region. The joint region has a thickness tjr, wherein tjr is not greater than at least one of 1.8 tn1 and 1.8 tn2.

Abstract: In a chemical vapor deposition process simple precursors such as a rare earth nitrate or acetate, Ba-nitrate or acetate and Cu-nitrate or acetate are dissolved in an appropriate solvent, preferably water, to form a solution, nebulized into a fine mist and applied to a substrate.

Abstract: A high temperature superconductor structure including: a substrate on which at least one buffer layer is deposited, a superconductor layer on the buffer layer, the superconducting layer composed of superconductor material that forms at least two substantially parallel superconductor filaments that continuously extend along the length of the substrate wherein at least two superconductor filaments are separated from each other by at least one insulating strip wherein the insulating strip continuously extends along the length of the substrate and is composed of insulating material with a resistivity greater than about 1 m?cm. Also disclosed are methods of producing high temperature superconductors.

Abstract: A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance.