Abstract: A bonding member 10 used for bonding a semiconductor device 20 and a substrate 30, the bonding member including: a thermal stress relieving layer 11 made of any of Ag, Cu, Au, and Al; a first Ag brazing material layer 12 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the semiconductor device is bonded; a second Ag brazing material layer 13 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the substrate is bonded; a first barrier layer 14 made of Ni and/or Ni alloy and provided between the thermal stress relieving layer and the first Ag brazing material layer; and a second barrier layer 15 made of Ni and/or Ni alloy and provided between the stress relieving layer and the second Ag brazing material layer, in which a thermal conductivity of the bonding member after a power cycle test is 200 W/m·K or more.

Abstract: A heat dissipation substrate having a metallic layer with few defects on its surface is obtained by a process including the steps of: forming a metallic layer by plating on the surface of an alloy composite mainly composed of a powder of a principal metal, additional metal and diamond; and heating and pressurizing alloy composite coated with metallic layer, at a temperature equal to or lower than melting points of the metallic layer and the alloy composite. Consequently a heat dissipation substrate is obtained which has a coefficient of linear expansion of 6.5 ppm/K or higher and 15 ppm/K or lower as well as a degree of thermal conductivity of 420 W/m·K or higher, the substrate having a metallic layer with few defects in its surface layer and thereby allowing for a Ni-based plating on which the void percentage in the solder joint will be 5% or lower.

Abstract: A heat dissipation substrate having the maximum value of the coefficient of linear expansion of 10 ppm/K or less in any direction in a plane parallel to the surface within a temperature range from room temperature to 800° C. as well as a thermal conductivity of 250 W/m·K or higher at 200° C. is produced by densifying an alloy composite of CuMo or CuW composed of Cu and coarse powder of Mo or W and subsequently cross-rolling the same alloy composite.

Abstract: A heat dissipation substrate having a metallic layer with few defects on its surface is obtained by a process including the steps of: forming a metallic layer by plating on the surface of an alloy composite mainly composed of a powder of a principal metal, additional metal and diamond; and heating and pressurizing alloy composite coated with metallic layer, at a temperature equal to or lower than melting points of the metallic layer and the alloy composite. Consequently a heat dissipation substrate is obtained which has a coefficient of linear expansion of 6.5 ppm/K or higher and 15 ppm/K or lower as well as a degree of thermal conductivity of 420 W/m·K or higher, the substrate having a metallic layer with few defects in its surface layer and thereby allowing for a Ni-based plating on which the void percentage in the solder joint will be 5% or lower.