Abstract: Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

Abstract: Techniques are disclosed for optical distortion reduction in projection systems for scanning projection and/or lithography. A projection system includes an illumination system configured to generate illumination radiation for generating an image of an object to be projected onto an image plane of the projection system. The illumination system includes a field omitting illumination condenser configured to receive the illumination radiation from a radiation source and provide a patterned illumination radiation beam to generate the image of the object, wherein the patterned illumination radiation beam comprises an omitted illumination portion corresponding to a ridge line of a roof prism disposed within an optical path of the projection system.

Abstract: Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

Abstract: A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Abstract: A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Abstract: A method of removing post-laser debris from a wafer includes, for an embodiment, forming a sacrificial layer over a layer to be patterned, patterning the sacrificial layer and the layer to be patterned using laser ablation, and removing the sacrificial layer and debris deposited on the sacrificial layer with water. The sacrificial layer includes a water soluble binder and a water soluble ultraviolet (UV) absorbent. Systems for removing the post-laser debris are also described.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract: Various techniques are disclosed for an apparatus and a method to remove a layer from a substrate having a pattern formed on the layer. In one example, the apparatus comprises a stage configured to receive and hold the substrate. The apparatus may further comprise an irradiating device comprising a projection lens and configured to irradiate the surface of the substrate with pulses of laser light having a selected fluence to remove an interstitial portion of the layer between the pattern without removing the pattern for corresponding irradiated areas of the substrate. The pulses of laser light may be focused through the projection lens, and the stage and the projection lens may be configured to move continuously relative each other to irradiate a plurality of areas of the substrate with the pulses of laser light.