Patents Assigned to Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences
  • Patent number: 11895912
    Abstract: The disclosure discloses an organic photoactive layer composite ink, an organic solar cell and preparation methods thereof. The organic photoactive layer composite ink includes an electron donor material, an electron acceptor material, an organic amine compound and an organic solvent. According to the disclosure, through an interaction between the organic amine compound and a photoactive layer material molecule, the photochemical reaction of the active layer molecule can be effectively inhibited, the photostability of the photoactive layer material is significantly improved, and hence the stability of the solar cell is greatly improved. The organic solar cell prepared by the disclosure has the advantages of high stability, long use service life and the like, and working properties such as energy conversion efficiency are also effectively improved; meanwhile, the organic solar cell is simple and convenient in preparation process, low in material cost and high in economic benefits.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: February 6, 2024
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Lingpeng Yan, Jinduo Yi, Mingxi Tan, Changqi Ma
  • Patent number: 11338249
    Abstract: The disclosure discloses an anti-haze anti-harmful gas air filter membrane as well as a preparation method and application thereof. The air filter membrane comprises a nano fiber membrane made of nano fibers and having a two-dimensional or three-dimensional network structure. The nano fiber membrane can be a high-molecular polymer nano fiber membrane prepared by utilizing an electrostatic spinning process, and can also be doped with an organic or inorganic additive capable of adsorbing and absorbing harmful gases, such as VOCs, NOx, SOx and NH3, in the air and/or a photocatalyst capable of degrading these harmful gases in a photocatalysis manner, or the like. The anti-haze anti-harmful gas air filter membrane disclosed by the disclosure can efficiently filter PM2.5 and PM10 particulate pollutants and the like in the air and simultaneously can efficiently identify and clear multiple harmful gases in the air.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: May 24, 2022
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Zhigang Zhao, Zhen Wang, Shan Cong
  • Patent number: 11245046
    Abstract: The present application discloses a multi-junction tandem laser photovoltaic cell, comprising a photovoltaic cell stack and a bottom electrode and a top electrode electrically connected to a bottom and a top of the photovoltaic cell stack, respectively, wherein the photovoltaic cell stack comprises stacked N AlGaAs PN-junction sub-cells, and adjacent sub-cells are connected in series via a tunneling junction, in which N?2. The AlGaAs PN-junction sub-cells use an AlGaAs absorbing layer. The present application further discloses a method of making the multi-junction tandem laser photovoltaic cell. The present application uses AlGaAs as the absorbing layer of the multi-junction tandem cell to convert laser energy, which can effectively increase the open circuit voltage of the photovoltaic cell, thereby significantly improving the conversion efficiency of the photovoltaic cell.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: February 8, 2022
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Jianrong Dong, Yongming Zhao, Yurun Sun, Jie Huang, Shuzhen Yu
  • Patent number: 10992107
    Abstract: The present disclosure discloses a narrow-linewidth laser. The narrow-linewidth laser comprises a passive ring waveguide, a first passive input/output waveguide which is coupled with the passive ring waveguide, a gain wavelength-selection unit which is used for providing gain for the whole laser and is configured to be capable of selecting the light with a specific wavelength to be coupled into the passive ring waveguide, and a second passive input/output waveguide which is coupled with the passive ring waveguide in order to output lasing light from the laser. The narrow-linewidth semiconductor laser provided by the present disclosure has a simple structure and does not have butt-joint coupling loss between a gain region and a waveguide external cavity region. There is no a linewidth limitation caused by butt-coupling loss in such semiconductor lasers.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: April 27, 2021
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventor: Ruiying Zhang
  • Patent number: 10439213
    Abstract: The invention provides a nitrogen-doped graphene coated nano sulfur positive electrode composite material, a preparation method, and an application thereof. The composite material includes: an effective three-dimensional conductive network formed by overlapping of nitrogen-doped graphenes, and nano sulfur particles coated by nitrogen doped graphene layers evenly. The preparation method includes: dispersing nitrogen-doped graphenes in a liquid-phase reaction system including at least sulfur source and acid, and depositing nano sulfur particles by an in-situ chemical reaction of the sulfur source and the acid, thereby preparing the positive electrode composite material. The positive electrode composite material of the invention has a high conductivity, a high sulfur utilization rate, and a high rate, thereby restraining the dissolution and shuttle effect in the lithium sulfur batteries, and enhancing the cyclic performance of the batteries.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: October 8, 2019
    Assignee: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCE
    Inventors: Yuegang Zhang, Yongcai Qiu, Wanfei Li, Guizhu Li, Yuan Hou, Meinan Liu, Lisha Zhou, Fangmin Ye, Hongfei Li
  • Patent number: 10421901
    Abstract: Provided is a preparation method of near-infrared silver sulfide quantum dots. The silver sulfide quantum dots have hydrophilic groups derived from a mercapto-containing hydrophilic reagent attached on the surface thereof, and the hydrophilic reagent is any one of mercaptoacetic acid, mercaptopropionic acid, cysteine, cysteamine, thioctic acid and ammonium mercaptoacetate or any combination thereof. The silver sulfide quantum dots have high fluorescence yield, good fluorescence stability, good biocompatibility and uniform sizes. The preparation method has moderate reaction conditions, simple operation, short production cycle, good reproducibility and is easy to control. The silver sulfide quantum dots can be used in the application of cellular imaging and biological tissue imaging.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: September 24, 2019
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Qiangbin Wang, Yejun Zhang
  • Patent number: 9810931
    Abstract: A ring cavity device includes a passive ring waveguide and an input/output waveguide horizontally coupled to the passive ring waveguide, including an active waveguide structure vertically coupled to the passive ring waveguide and/or the input/output waveguide. The active waveguide structure compensates for the loss of the passive ring waveguide. A method for fabricating a ring cavity device is also included. The ring cavity device may obtain part of the gain by vertical coupling or mixed coupling (vertical coupling followed by horizontal coupling) thus to compensate the loss in the ring cavity device. Hence, the quality factor of the ring cavity device is improved.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: November 7, 2017
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventor: Ruiying Zhang
  • Patent number: 9797007
    Abstract: A micro-liquid phase reaction method based on a substrate with a hydrophilic-hydrophobic patterned surface, including the following: applying a liquid phase system containing a hydrotropic substance and/or an amphipathic substance to a hydrophobic smooth plane in a sample-spotting manner to form an array of tiny droplets, subsequently removing the solvent in each droplet to bond the hydrotropic substance and/or amphipathic substance in each droplet to the hydrophobic smooth plane so as to form an array of hydrophilic bonding points, then moving an aqueous phase system or hydrophilic liquid phase system containing more than one reactants over the hydrophobic smooth plane, thereby forming island-like tiny reaction droplets at each hydrophilic bonding point, and finally under the set reaction conditions, reacting the reactants in each tiny reaction droplet.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: October 24, 2017
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Science
    Inventors: Jiong Li, Kexiao Zheng
  • Patent number: 9780276
    Abstract: The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: October 3, 2017
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Yong Cai, Yibin Zhang, Fei Xu
  • Patent number: 9778175
    Abstract: A high-sensitivity terahertz micro-fluidic channel sensor and a preparation method thereof. The sensor includes a substrate and a cover layer, respectively provided with a metal plane reflector and a metal microstructure layer; a micro-fluidic channel is formed between the metal plane reflector and the metal microstructure layer; and when the micro-fluidic channel tests liquid, a composite structure formed of the metal microstructure layer, the test liquid and the metal plane reflector shows good absorption properties. The method includes forming a metal plane reflector and a metal microstructure layer on a substrate and a cover layer, respectively; fixedly connecting the substrate to the cover layer, and forming a closed micro-fluidic channel between the substrate and the cover layer; and forming a through via, communicated to the micro-fluidic channel, on the substrate and/or the cover layer, to form a flow channel for transferring liquid to be tested to or from the sensor.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: October 3, 2017
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Qin Chen, Fuhe Sun
  • Patent number: 9444002
    Abstract: A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: September 13, 2016
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    Inventors: Qin Chen, Shichao Song
  • Publication number: 20160083647
    Abstract: Provided is a preparation method of near-infrared silver sulfide quantum dots. The silver sulfide quantum dots have hydrophilic groups derived from a mercapto-containing hydrophilic reagent attached on the surface thereof, and the hydrophilic reagent is any one of mercaptoacetic acid, mercaptopropionic acid, cysteine, cysteamine, thioctic acid and ammonium mercaptoacetate or any combination thereof. The silver sulfide quantum dots have high fluorescence yield, good fluorescence stability, good biocompatibility and uniform sizes. The preparation method has moderate reaction conditions, simple operation, short production cycle, good reproducibility and is easy to control. The silver sulfide quantum dots can be used in the application of cellular imaging and biological tissue imaging.
    Type: Application
    Filed: December 1, 2015
    Publication date: March 24, 2016
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Qiangbin Wang, Yejun Zhang
  • Patent number: 9070756
    Abstract: A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional electron gas (2DEG) formed in the heterostructure; the heterostructure comprises a first semiconductor (113) and a second semiconductor (114); the first semiconductor (113) is disposed between the source electrode (112) and drain electrode (111); the second semiconductor (114) is formed on the surface of the first semiconductor (113) and is provided with a band gap wider than the first semiconductor (113); the main gate (116) is disposed at the side of the surface of the second semiconductor (114) adjacent to the source electrode (112), and is in Schottky contact with the second semiconductor (114); the dielectric layer (117) is disposed on the surfaces of the second semiconduc
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: June 30, 2015
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences
    Inventors: Yong Cai, Guohao Yu, Zhihua Dong, Baoshun Zhang