Patents Assigned to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
  • Publication number: 20210327703
    Abstract: The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one ?-(AlxGa1?x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99?x?0.01; and forming gallium oxide epitaxial layers on the ?-(AlxGa1?x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of ?-Ga2O3 and ?-Al2O3, but also effectively reduce the defect density of ?-Ga2O3 epitaxial film, thus further improving the crystal quality of the ?-Ga2O3 epitaxial film materials.
    Type: Application
    Filed: October 8, 2018
    Publication date: October 21, 2021
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Xiaodong ZHANG, Yaming FAN, Baoshun ZHANG
  • Patent number: 11145753
    Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: October 12, 2021
    Assignee: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Guohao Yu, Fu Chen, Wenxin Tang, Xiaodong Zhang, Yong Cai, Baoshun Zhang
  • Publication number: 20210309867
    Abstract: A carbon nanotube aligned film as well as a preparation method and application thereof are disclosed. The preparation method includes: providing a carbon nanotube dispersion solution comprising a selected carbon nanotube, a polymer as a carbon nanotube dispersing agent and binding to the selected carbon nanotube, an aromatic molecule binding to the selected carbon nanotube and allowing the surface of the selected carbon nanotube to have the same charges and an organic solvent being at least used for cooperating with the rest components of the dispersion solution to form uniform dispersion solution; and introducing a water phase layer to the upper surface of the dispersion solution to form a double-layer liquid phase system, partially or completely inserting a base into the double-layer liquid system, and then pulling out the base so as to form the carbon nanotube aligned film on the surface of the base.
    Type: Application
    Filed: October 16, 2018
    Publication date: October 7, 2021
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Bing GAO, Song QIU, Hehua JIN, Qingwen LI
  • Publication number: 20210265967
    Abstract: A film bulk acoustic resonator and a fabricating method thereof is provided. The fabricating method includes: fabricating a lower electrode on a first surface of an SOI substrate; forming piezoelectric layers on the first surface of the SOI substrate and the lower electrode; forming top electrodes on the piezoelectric layers; processing an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are oppositely arranged. The fabricating method simplifies a preparation process of FBAR, a quality of a AlN film crystal grown though the fabrication method is high, an improvement of a device performance is facilitated, and meanwhile a thickness of a top silicon is controlled through a position of a silicon injected oxygen isolation to regulate a frequency of the film bulk acoustic resonator.
    Type: Application
    Filed: October 19, 2018
    Publication date: August 26, 2021
    Applicant: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Xiaodong ZHANG, Wenkui LIN, Baoshun ZHANG
  • Publication number: 20210215988
    Abstract: A multicolor electrochromic structure comprises a working electrode, an electrolyte and an auxiliary electrode. The electrolyte is distributed between the working electrode and the auxiliary electrode. The working electrode comprises an electrochromic layer which comprises a first reflective surface and a second reflective surface arranged face to face in parallel. A dielectric layer is arranged between the first and the second reflective surface. The first and the second reflective surfaces and the dielectric layer form an optical cavity. The dielectric layer is fabricated by an electrochromic material. The multicolor electrochromic structure can combine a structural color with electrochromism to display various color changes; it features a simple structure, low costs and a wide application prospect, and it is easy to be fabricated.
    Type: Application
    Filed: March 6, 2019
    Publication date: July 15, 2021
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Zhigang ZHAO, Zhen WANG, Shan CONG
  • Patent number: 10962475
    Abstract: A sensor including: a substrate including a first surface and a second surface opposing to each other, the first surface being recessed to form a first groove, and the substrate further including at least two through holes penetrating through the second surface and a bottom surface of the first groove; a dielectric layer disposed to cover the first surface, and opposing to the first groove; a metal layer disposed on the bottom surface of the first groove and avoiding openings of the through holes on the bottom surface of the first groove, wherein the dielectric layer, the metal layer and an interval between the dielectric layer and the metal layer form a slit optical waveguide; and a grating formed on the dielectric layer, wherein the grating is used to implement wave vector matching of an incident light with a mode of the slit optical waveguide.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: March 30, 2021
    Assignee: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Qin Chen, Li Liang, Long Wen, Xin Hu
  • Publication number: 20210005739
    Abstract: A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.
    Type: Application
    Filed: April 10, 2018
    Publication date: January 7, 2021
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Qian SUN, Yu ZHOU, Yaozong ZHONG, Hongwei GAO, Meixin FENG, Hui YANG
  • Patent number: 10868298
    Abstract: Disclosed is a porous carbon nanotube microsphere material and the preparation method and use thereof, a lithium metal-skeleton carbon composite and the preparation method thereof, a negative electrode of a secondary battery, a secondary battery, and a metal-skeleton carbon composite. The porous carbon nanotube microsphere material is spherical or spheroidal particles composed of carbon nanotubes. The spherical or spheroidal particles have an average diameter of 1 ?m to 100 ?m. A large number of nanoscale pores are composed of interlaced nanotubes inside the particle, and the pore size is 1 nm to 200 nm. The preparation method thereof comprises: mixing and dispersing carbon nanotubes and a solvent, and performing spray drying, to obtain the carbon nanotube microspheres. The lithium metal-skeleton carbon composite is obtained by uniformly mixing lithium metal in a melted state with a porous carbon material carrier and cooling.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: December 15, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    Inventors: Yalong Wang, Zhaolong Du, Wei Lu, Liwei Chen, Xiaodong Wu
  • Patent number: 10840419
    Abstract: The present application discloses a nitride semiconductor light-emitting device and a manufacture method thereof. The nitride semiconductor light-emitting device includes an epitaxial structure, wherein the epitaxial structure has a first face and a second face opposite to the first face, the first face is a (0001) nitrogen face and located at the n type side of the epitaxial structure, the second face is located at the p type side of the epitaxial structure, the n type side of the epitaxial structure is electrically contacted with an n type electrode, the p type side is electrically contacted with a p type electrode, and a ridge waveguide structure is formed on the first face.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: November 17, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Qian Sun, Meixin Feng, Yu Zhou, Hongwei Gao, Hui Yang
  • Patent number: 10826125
    Abstract: The invention relates to a mono-nuclei cationized magnesium salt, a preparation method and applications thereof. The mono-nuclei cationized magnesium salt has a chemical formula of MgRnMX4-mYm, wherein R is a non-aqueous solvent molecule, M includes Al3+ and/or B3+, X and Y respectively include halide ion and halogenoid ion, n is any one integer selected in the range of 0˜6, and m is any one integer selected in the range of 0-4. The mono-nuclei cationized magnesium salt provided by the invention has a simple structure and excellent electrochemical properties, and the preparation method thereof features low cost, integrated synthesis, accessible raw materials, simple preparation process, and simple scaled production.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: November 3, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Yuegang Zhang, Wanfei Li
  • Publication number: 20200251934
    Abstract: A new RF/microwave energy harvesting device based on spintronics is provided. The device comprises at least one RF/microwave energy conversion element comprising a first magnetic layer connected to a RF/microwave signal receiving element; a non-magnetic space layer; and an energy conversion layer accumulating positive and negative charges at both of upper and lower ends of the RF/microwave energy conversion element to implement a conversion of a RF/microwave energy into a direct voltage signal. Compared with the prior art, the device has advantages such as a simple structure, a small size, a wide operating frequency and the like.
    Type: Application
    Filed: March 24, 2017
    Publication date: August 6, 2020
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SINANO) CHINESE ACADEMY OF SCIENCES
    Inventors: Zhongming ZENG, Giovanni FINOCCHIO, Bin FANG, Jialin CAI, Wei TANG, Xin LUO, Rongxin XIONG, Baoshun ZHANG
  • Publication number: 20200227541
    Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.
    Type: Application
    Filed: May 8, 2019
    Publication date: July 16, 2020
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Guohao YU, Fu CHEN, Wenxin TANG, Xiaodong ZHANG, Yong CAI, Baoshun ZHANG
  • Patent number: 10676361
    Abstract: The disclosure discloses a method and reagent for improving a yield of selective dispersion of semiconducting carbon nanotubes.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: June 9, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Qingwen Li, Dan Liu, Song Qiu, Jin Zhang, Hehua Jin, Hongbo Li
  • Patent number: 10640884
    Abstract: A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. The two-dimensional black phosphorus PN junction includes a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties such as a unidirectional conductivity, or a special photovoltaic effect.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: May 5, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Kai Zhang, Yuegang Zhang, Yijun Xu
  • Patent number: 10633686
    Abstract: A bio-enzyme sensor capable of super-hydrophobic solid-liquid-gas three-phase coexistence and a method for preparing the same. The bio-enzyme sensor comprises, from bottom to top, a base material with super-hydrophobic surface, a catalytic material having the function of catalyzing hydrogen peroxide, and bio-enzyme capable of reacting with a substance to be tested to generate hydrogen peroxide. A sufficient amount of oxygen can be provided for enzymatic reaction by forming a state of solid-liquid-gas three-phase coexistence on the surface of the super-hydrophobic material.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: April 28, 2020
    Assignee: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Lei Jiang, Xiangcheng Zhang, Yongjiu Lei, Ruize Sun, Xinjian Feng
  • Patent number: 10620197
    Abstract: The present application discloses a magnetic microchip having a graph code as well as a preparation method and application thereof. The magnetic microchip comprises: a graph code comprising more than one opaque microstructure mainly consisting of colloid aggregates formed by aggregating magnetic solid particles, wherein adjacent magnetic solid particles are isolated at least by an organic molecule and/or an inorganic molecule; and a transparent encapsulating structure at least used for wrapping the opaque microstructure. The magnetic microchip of the present application is prepared by adopting a micromachining process and has high in machining precision and repeatability, the size difference between different batches or between different individuals at the same batch can be ignored, use is convenient, and accuracy of a detection result can be effectively ensured, thereby greatly improving analysis quality.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: April 14, 2020
    Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Jiong Li, Kexiao Zheng, Chao Chen
  • Publication number: 20200028026
    Abstract: The present disclosure discloses a manufacturing method of a quantum dot structure including: providing a quantum dot film layer on a substrate; providing a first protection film on the quantum dot film layer; providing a patterned array on the first protection film; providing a second protection film on the first protection film and the patterned array to obtain an intermediate body; and performing an annealing process on the intermediate body to obtain the quantum dot structure on the substrate.
    Type: Application
    Filed: December 30, 2016
    Publication date: January 23, 2020
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Ziyang ZHANG, Rong HUANG, Yuanqing HUANG
  • Publication number: 20190271899
    Abstract: The present disclosure discloses a saturable absorber mirror of a composite structure, including: a substrate; a buffer layer on the substrate; a distributed Bragg reflective mirror on the buffer layer; a quantum dot or quantum well saturable absorber body on the distributed Bragg reflective mirror; a graphene saturable absorber body on the quantum dot or quantum well saturable absorber body. In the present disclosure, the graphene saturable absorber body is composited with the quantum dot saturable absorber body or the quantum well saturable absorber body to be used as the saturable absorber body in the saturable absorber mirror of the present disclosure. A thermal damage threshold and an optical property stability of the saturable absorber body are improved, and an ultrafast laser pulse with high power and short pulse mode locking, a stable output repetition cycle, a narrow pulse width, and a short response time is implemented.
    Type: Application
    Filed: December 27, 2016
    Publication date: September 5, 2019
    Applicant: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Ziyang ZHANG, Qinglu LIU
  • Publication number: 20190217290
    Abstract: The disclosure discloses an encoded chip based micro-array and a preparation method thereof. In a typical embodiment, the preparation method comprises: providing a carrier, which has at least one fluid accommodating cavity, wherein at least one carrying surface is distributed in the fluid accommodating cavity; uniformly coating the carrying surface with an adhesive; adding a selected fluid to the fluid accommodating cavity till the carrying surface is immersed by the selected fluid; depositing encoded microchips dispersed in the selected fluid on the carrying surface, and enabling the encoded microchips to be combined with the adhesive distributed on the carrying surface; and curing the adhesive, thereby fixing the microchips onto the carrying surface. The disclosure further discloses a biochemical kit based on the micro-array, a biochemical detection system and method, and the like.
    Type: Application
    Filed: September 27, 2017
    Publication date: July 18, 2019
    Applicant: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Jiong LI, Kexiao ZHENG
  • Publication number: 20190218100
    Abstract: The disclosure discloses a method and reagent for improving a yield of selective dispersion of semiconducting carbon nanotubes.
    Type: Application
    Filed: April 28, 2017
    Publication date: July 18, 2019
    Applicant: Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences
    Inventors: Qingwen LI, Dan LIU, Song QIU, Jin ZHANG, Hehua JIN, Hongbo LI