Abstract: A sweat sensor, includes a sweat-guiding electrode layer including an insulating layer, a conductive electrode provided in the insulating layer, and a first through hole, wherein the first through hole goes through the insulating layer and the conductive electrode; an adhesive layer provided on the insulating layer, wherein the adhesive layer is provided with a second through hole communicated with the first through hole; and a water-absorbing diffusion layer provided on the adhesive layer, wherein the water-absorbing diffusion layer covers the second through hole. A sweat sensing system is further provided with a plurality of sweat sensors. The sweat sensor simultaneously and continuously detects a sweat volume and an electrolyte concentration in real time, and prevents the mixture of old and new sweat from interfering with the detection of the electrolyte concentration.

Abstract: A multi junction laminated laser photovoltaic cell includes a cell unit laminated body and upper and lower electrodes electrically connected with the bottom and top of the cell unit laminated body, respectively, wherein the cell unit laminated body includes more than 6 laminated PN-junction subcells, adjacent two subcells are connected in series via tunnel junctions, wherein each PN-junction subcell uses a semiconductor single crystal material with a specific band gap as the absorption layer, the multiple subcells at least have two different band gaps, and the band gaps of the subcells are arranged in such an order that they decrease successively from the light incidence side to other side of the photovoltaic cell.

Abstract: A measurement method of subcell photocurrents and a matching degree of the subcell photocurrents of a multi-junction photovoltaic cell is provided. The measurement method includes measuring an I-V characteristic of the multi-junction photovoltaic cell; and measuring currents corresponding to respective current steps in an I-V curve to obtain approximate values of short-circuit currents of subcells in the multi-junction photovoltaic cell, and then calculating a mismatching degree of the multi-junction photovoltaic cell using step currents. According to the measurement method, a current mismatching degree of the multi-junction photovoltaic cell is obtained by calculating the mismatching degree of the step currents occurring in the I-V curve. The measurement method is rapid and simple, the measurement method avoids complicated and time-consuming processes where the subcell photocurrents are calculated based on a standard light source spectrum integral with bias lights applied.

Abstract: A measurement method of subcell photocurrents and a matching degree of the subcell photocurrents of a multi-junction photovoltaic cell is provided. The measurement method includes measuring an I-V characteristic of the multi-junction photovoltaic cell; and measuring currents corresponding to respective current steps in an I-V curve to obtain approximate values of short-circuit currents of subcells in the multi-junction photovoltaic cell, and then calculating a mismatching degree of the multi-junction photovoltaic cell using step currents. According to the measurement method, a current mismatching degree of the multi-junction photovoltaic cell is obtained by calculating the mismatching degree of the step currents occurring in the I-V curve. The measurement method is rapid and simple, the measurement method avoids complicated and time-consuming processes where the subcell photocurrents are calculated based on a standard light source spectrum integral with bias lights applied.

Abstract: This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

Abstract: A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.

Abstract: A multi junction laminated laser photovoltaic cell includes a cell unit laminated body and upper and lower electrodes electrically connected with the bottom and top of the cell unit laminated body, respectively, wherein the cell unit laminated body includes more than 6 laminated PN-junction subcells, adjacent two subcells are connected in series via tunnel junctions, wherein each PN-junction subcell uses a semiconductor single crystal material with a specific band gap as the absorption layer, the multiple subcells at least have two different band gaps, and the band gaps of the subcells are arranged in such an order that they decrease successively from the light incidence side to other side of the photovoltaic cell.

Abstract: A carbon nanotube aligned film as well as a preparation method and application thereof are disclosed. The preparation method includes: providing a carbon nanotube dispersion solution comprising a selected carbon nanotube, a polymer as a carbon nanotube dispersing agent and binding to the selected carbon nanotube, an aromatic molecule binding to the selected carbon nanotube and allowing the surface of the selected carbon nanotube to have the same charges and an organic solvent being at least used for cooperating with the rest components of the dispersion solution to form uniform dispersion solution; and introducing a water phase layer to the upper surface of the dispersion solution to form a double-layer liquid phase system, partially or completely inserting a base into the double-layer liquid system, and then pulling out the base so as to form the carbon nanotube aligned film on the surface of the base.

Abstract: The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.

Abstract: The present application discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises manufacturing a semiconductor material layer comprising two laminated semiconductor layers between which an etching transition layer is provided; and etching a part of one of semiconductor layers located in a selected region until etching is stopped after reaching or entering the etching transition layer, subjecting the part of the etching transition layer located in the selected region to thermal decomposition through thermal treatment to be completely removed, and realizing termination of thermal decomposition on another semiconductor layer, so as to precisely form a trench structure in the semiconductor material layer.

Abstract: A flexible boron nitride nanoribbon aerogel has an interconnected three-dimensional porous network structure which is formed by mutually twining and contacting boron nitride nanoribbons and consists of macropores having a pore diameter of more than 50 nm, mesopores having a pore diameter of 2-50 nm and micropores having a pore diameter of less than 2 nm. The preparation method of the flexible boron nitride nanoribbon aerogel includes the following steps: performing high-temperature dissolution on boric acid and a nitrogen-containing precursor to form a transparent precursor solution, preparing the transparent precursor solution into precursor hydrogel, subsequently drying and performing high-temperature pyrolysis to obtain the flexible boron nitride nanoribbon aerogel. The boron nitride nanoribbon aerogel has excellent flexibility and resilience and can withstand different forms of loads from the outside within a wide temperature range.

Abstract: The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one ?-(AlxGa1?x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99?x?0.01; and forming gallium oxide epitaxial layers on the ?-(AlxGa1?x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of ?-Ga2O3 and ?-Al2O3, but also effectively reduce the defect density of ?-Ga2O3 epitaxial film, thus further improving the crystal quality of the ?-Ga2O3 epitaxial film materials.

Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

Abstract: A carbon nanotube aligned film as well as a preparation method and application thereof are disclosed. The preparation method includes: providing a carbon nanotube dispersion solution comprising a selected carbon nanotube, a polymer as a carbon nanotube dispersing agent and binding to the selected carbon nanotube, an aromatic molecule binding to the selected carbon nanotube and allowing the surface of the selected carbon nanotube to have the same charges and an organic solvent being at least used for cooperating with the rest components of the dispersion solution to form uniform dispersion solution; and introducing a water phase layer to the upper surface of the dispersion solution to form a double-layer liquid phase system, partially or completely inserting a base into the double-layer liquid system, and then pulling out the base so as to form the carbon nanotube aligned film on the surface of the base.

Abstract: A film bulk acoustic resonator and a fabricating method thereof is provided. The fabricating method includes: fabricating a lower electrode on a first surface of an SOI substrate; forming piezoelectric layers on the first surface of the SOI substrate and the lower electrode; forming top electrodes on the piezoelectric layers; processing an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are oppositely arranged. The fabricating method simplifies a preparation process of FBAR, a quality of a AlN film crystal grown though the fabrication method is high, an improvement of a device performance is facilitated, and meanwhile a thickness of a top silicon is controlled through a position of a silicon injected oxygen isolation to regulate a frequency of the film bulk acoustic resonator.

Abstract: A multicolor electrochromic structure comprises a working electrode, an electrolyte and an auxiliary electrode. The electrolyte is distributed between the working electrode and the auxiliary electrode. The working electrode comprises an electrochromic layer which comprises a first reflective surface and a second reflective surface arranged face to face in parallel. A dielectric layer is arranged between the first and the second reflective surface. The first and the second reflective surfaces and the dielectric layer form an optical cavity. The dielectric layer is fabricated by an electrochromic material. The multicolor electrochromic structure can combine a structural color with electrochromism to display various color changes; it features a simple structure, low costs and a wide application prospect, and it is easy to be fabricated.

Abstract: A sensor including: a substrate including a first surface and a second surface opposing to each other, the first surface being recessed to form a first groove, and the substrate further including at least two through holes penetrating through the second surface and a bottom surface of the first groove; a dielectric layer disposed to cover the first surface, and opposing to the first groove; a metal layer disposed on the bottom surface of the first groove and avoiding openings of the through holes on the bottom surface of the first groove, wherein the dielectric layer, the metal layer and an interval between the dielectric layer and the metal layer form a slit optical waveguide; and a grating formed on the dielectric layer, wherein the grating is used to implement wave vector matching of an incident light with a mode of the slit optical waveguide.

Abstract: A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.

Abstract: Disclosed is a porous carbon nanotube microsphere material and the preparation method and use thereof, a lithium metal-skeleton carbon composite and the preparation method thereof, a negative electrode of a secondary battery, a secondary battery, and a metal-skeleton carbon composite. The porous carbon nanotube microsphere material is spherical or spheroidal particles composed of carbon nanotubes. The spherical or spheroidal particles have an average diameter of 1 ?m to 100 ?m. A large number of nanoscale pores are composed of interlaced nanotubes inside the particle, and the pore size is 1 nm to 200 nm. The preparation method thereof comprises: mixing and dispersing carbon nanotubes and a solvent, and performing spray drying, to obtain the carbon nanotube microspheres. The lithium metal-skeleton carbon composite is obtained by uniformly mixing lithium metal in a melted state with a porous carbon material carrier and cooling.

Abstract: The present application discloses a nitride semiconductor light-emitting device and a manufacture method thereof. The nitride semiconductor light-emitting device includes an epitaxial structure, wherein the epitaxial structure has a first face and a second face opposite to the first face, the first face is a (0001) nitrogen face and located at the n type side of the epitaxial structure, the second face is located at the p type side of the epitaxial structure, the n type side of the epitaxial structure is electrically contacted with an n type electrode, the p type side is electrically contacted with a p type electrode, and a ridge waveguide structure is formed on the first face.