Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer includes a first superlattice layer including a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed. The semiconductor structure includes a composition of a first dopant which is a n-type dopant.

Abstract: Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; th

Abstract: In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.

Abstract: In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

Abstract: Disclosed is a sterilization device. One embodiment of the sterilization device comprises: a frame including a first coupling part, a second coupling part, and a first connection part for connecting the first coupling part and the second coupling part; a first circuit board disposed in the first coupling part; a second circuit board disposed in the second coupling part; a first ultraviolet light emitting element disposed on one surface of the first circuit board so as to face in a first direction; a second ultraviolet light emitting element disposed on one surface of the second circuit board so as to face in a second direction crossing the first direction; and a first wiring part connected to the second circuit board to supply power, wherein the first connection part includes a first through-hole through which the first wiring part passes.

Abstract: An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. A surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an aperture area disposed on the active layer and including an aperture and an insulating region; and a second reflective layer disposed in the aperture area. The active layer may comprise a plurality of quantum wells, quantum barriers, and intermediate layers disposed between the quantum wells and the quantum barriers. The quantum wells and the quantum barriers may include a ternary material, and the intermediate layers may comprise a binary material.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each

Abstract: Disclosed in an embodiment are a semiconductor device and a light-emitting device package including same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged in a matrix shape in the central area of the substrate; passivation layers arranged on upper surfaces and lateral surfaces of the semiconductor structures and on the edge area of the substrate; a plurality of first wiring lines which are arranged at lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include first end parts extending from the central area to the edge area of the substrate; a plurality of second wiring lines which are arranged at the lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include second end parts extending from the central area to the edge area of the substrate; a plurality of first pads penetrating the passivation layer so as to be connected to the plurality of first end parts;

Abstract: An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)×XE18 (atoms/cm3) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0?(2X/3)]% to [99.9?(X/3)]%, wherein X may be 0 to 3.

Abstract: A semiconductor device package includes a substrate; and a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate. Further, the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The semiconductor device package also includes a plurality of first interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the first conductivity-type semiconductor layer; and a plurality of second interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the second conductivity-type semiconductor layer.

Abstract: A light emitting device package according to an embodiment comprises: first and second frames disposed spaced apart from each other; a body disposed surrounding the first and second frames and having first and second openings spaced apart from each other; a light emitting device disposed on the body and including first and second bonding parts; and first and second conductive parts disposed in the first and second openings respectively, wherein the first and second openings perpendicularly overlap the first and second frames respectively, the first and second conductive parts are electrically connected to the first and second frames respectively, the first and second bonding parts are disposed in the first and second openings respectively, and are electrically connected to the first and second conductive parts, and the light emitting device includes a support region disposed on the body outside the first and second openings.

Abstract: The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer. The first to third metal layers may include different materials, and the second metal layer may include copper (Cu). The third metal layer may prevent diffusion of copper from the second metal layer into the first metal layer.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a substrate; a light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess; a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer; a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the first pad vertically overlaps the

Abstract: The embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively. In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.

Abstract: A semiconductor device including a conductive substrate; a semiconductor structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and including a plurality of recesses; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses. The plurality of recesses include a first recess and a plurality of second recesses, the first electrode includes a plurality of protrusion electrodes extending to the inside of the second, the active layer includes an inactive area arranged between the semiconductor structure and the first recess, and an active area arranged on the inner side of the first recess.

Abstract: This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.

Abstract: A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the