Patents Assigned to SUZHOU LEKTN SEMICONDUCTOR CO., LTD.
  • Patent number: 11121286
    Abstract: A semiconductor device according to an embodiment includes a substrate, first and second light emitting structures disposed on the substrate, a first reflective electrode disposed on the first light emitting structure, a second reflective electrode disposed on the second light emitting structure, a connection electrode, a first electrode pad, and a second electrode pad. According to the embodiment, the first light emitting structure includes a first semiconductor layer of a first conductivity type, a first active layer disposed on the first semiconductor layer, a second semiconductor layer of a second conductivity type and disposed on the first active layer, and a first through hole provided through the second semiconductor layer and the first active layer to expose the first semiconductor layer.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: September 14, 2021
    Assignee: SUZHOU LEKTN SEMICONDUCTOR CO., LTD.
    Inventor: Jae Won Seo