Abstract: This invention provides a method and a system to deposit a thin layer of very reactive metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The method is comprised of sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a high vacuum reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. The system comprising a very high efficiency H plasma source, the high vacuum reactor chamber, an anti-corrosion turbo pump and a high vacuum load lock is required for reducing contaminant gases such as O2, H2O, and CO2, and for increasing hydrogen plasma efficiency.

Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

Abstract: A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.

Abstract: A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.

Abstract: A materials properties measuring system for using electromagnetic radiation interactions with selected materials positioned at a measuring location to determine selected properties thereof having an electromagnetic radiation source along with a plurality of radiation convergence elements for receiving any incident beams of electromagnetic radiation including the source having corresponding selected cross sections substantially perpendicular to the input path, and for converging these incident beams into corresponding departing beams including to the selected material each having a selected cross section substantially perpendicular to the output path that is smaller than that of its corresponding incident beam, and transmitting them to a beamsplitter that has an area as great as any such element. An electromagnetic radiation receiver is provided to receive any beams of electromagnetic radiation incident thereon after propagating thereto from the beamsplitter.