Abstract: Systems and methods according to one or more embodiments are provided for improved reliability and efficiency of high side power stage output drivers used in switching amplifiers. In one example, a system includes a power device structure comprising an nwell structure formed within a semiconductor p substrate and a pwell structure formed within the nwell structure. The system further includes one or more NMOS electronic power devices formed on the pwell structure and a pwell guardring formed on the pwell structure configured to surround the one or more NMOS electronic power devices. The system further includes an nwell guardring formed on the nwell structure configured to surround the pwell structure and a p+ guardring formed on the nwell structure configured to surround the nwell guardring.

Abstract: An integrating photosensor includes an NPN phototransistor having its collector connected to a source of positive voltage, a P-channel MOS transistor having its gate connected to row-select line, its source connected to the emitter of the phototransistor, and its drain connected to a column sense line. The NPN phototransistor has an intrinsic base-collector capacitance. An integrating sense amplifier according to the present invention includes an amplifying element having an inverting input and a non-inverting input. The non-inverting input is connected to a source of reference voltage the inverting input is connected to a sense line. A P-channel balance transistor is connected between the inverting input and the output of the amplifying element and a capacitor is also connected between the inverting input and output of the amplifying element. An exponential feedback element is connected between the output and the inverting input of the amplifying element.