Patents Assigned to Synos Technology, Inc.
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Publication number: 20140065307Abstract: Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased.Type: ApplicationFiled: August 13, 2013Publication date: March 6, 2014Applicant: Synos Technology, Inc.Inventor: Sang In Lee
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Publication number: 20140030447Abstract: Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate.Type: ApplicationFiled: January 15, 2013Publication date: January 30, 2014Applicant: Synos Technology, Inc.Inventors: Sang In Lee, Chang Wan Hwang
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Publication number: 20140027777Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.Type: ApplicationFiled: July 27, 2012Publication date: January 30, 2014Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Publication number: 20130337172Abstract: Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate.Type: ApplicationFiled: May 29, 2013Publication date: December 19, 2013Applicant: Synos Technology, Inc.Inventor: Sang In Lee
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Publication number: 20130260034Abstract: An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.Type: ApplicationFiled: March 23, 2013Publication date: October 3, 2013Applicant: Synos Technology, Inc.Inventors: Samuel S. Pak, Sang In Lee, Ilsong Lee, Hyo Seok Yang
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Publication number: 20130237065Abstract: Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.Type: ApplicationFiled: February 21, 2013Publication date: September 12, 2013Applicant: SYNOS TECHNOLOGY, INC.Inventors: Sang In Lee, Ilsong Lee, Hyo Seok Yang
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Patent number: 8501633Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.Type: GrantFiled: August 10, 2012Date of Patent: August 6, 2013Assignee: Synos Technology, Inc.Inventor: Sang In Lee
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Patent number: 8470718Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.Type: GrantFiled: August 11, 2009Date of Patent: June 25, 2013Assignee: Synos Technology, Inc.Inventor: Sang In Lee
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Publication number: 20130122197Abstract: Embodiments relate to a structure for securing a shadow mask and a susceptor where the top surface of the shadow mask mounted with the susceptor is flush with the top surface of the susceptor. When the susceptor is mounted with the shadow mask, the entire top surface of the susceptor and the shadow mask is substantially coplanar. A substrate onto which material is deposited is placed below the shadow mask. The susceptor moves below reactors for injecting materials or radicals. Since the entire top surface of the susceptor is substantially flat, the vertical distance between the reactors and the susceptor can be reduced, contributing to the overall quality of the layer formed on the substrate and reducing the materials wasted by leaking outside the gap between the susceptor and the reactors.Type: ApplicationFiled: November 1, 2012Publication date: May 16, 2013Applicant: SYNOS TECHNOLOGY, INC.Inventor: SYNOS TECHNOLOGY, INC.
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Publication number: 20130092085Abstract: Embodiments relate to a linear deposition apparatus with mechanism for securing a shadow mask and a substrate onto a susceptor. The linear deposition apparatus includes a set of members attached to latches that are raised to unlock the shadow mask and the substrate from the susceptor. The latches are lowered to secure the shadow mask and the substrate to the susceptor. Another set of members are provided in the linear deposition apparatus to move and align the shadow mask with the substrate. The linear deposition apparatus also includes a main body and two wings provided at both sides of the main body to receive the substrate as the substrate moves linearly to expose the substrate to materials or radicals injected by reactors.Type: ApplicationFiled: October 9, 2012Publication date: April 18, 2013Applicant: SYNOS TECHNOLOGY, INC.Inventor: Synos Technology, Inc.
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Publication number: 20130022658Abstract: Embodiments relate to depositing a layer of antimicrobial material such as silver on a permeable substrate using atomic layer deposition (ALD). A deposition device includes two injectors that inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate that passes between the injectors. Part of the gas injected by an injector penetrates the permeable substrate and is discharged by the other injector. The remaining gas injected by the injector moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same injector. While penetrating the substrate or moving in parallel to the surface, the source precursor or the reactant precursor becomes absorbed on the substrate or react with precursor already present on the substrate to deposit the antimicrobial material on the substrate.Type: ApplicationFiled: June 27, 2012Publication date: January 24, 2013Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Publication number: 20130023172Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.Type: ApplicationFiled: June 28, 2012Publication date: January 24, 2013Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Patent number: 8333839Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.Type: GrantFiled: December 27, 2007Date of Patent: December 18, 2012Assignee: Synos Technology, Inc.Inventor: Jae-eung Oh
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Publication number: 20120302071Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.Type: ApplicationFiled: August 10, 2012Publication date: November 29, 2012Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Publication number: 20120301632Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.Type: ApplicationFiled: July 31, 2012Publication date: November 29, 2012Applicant: Synos Technology, Inc.Inventor: Sang In LEE
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Publication number: 20120251738Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.Type: ApplicationFiled: March 2, 2012Publication date: October 4, 2012Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Patent number: 8263502Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.Type: GrantFiled: August 11, 2009Date of Patent: September 11, 2012Assignee: Synos Technology, Inc.Inventor: Sang In Lee
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Patent number: 8257799Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.Type: GrantFiled: February 22, 2010Date of Patent: September 4, 2012Assignee: Synos Technology, Inc.Inventor: Sang In Lee
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Publication number: 20120213947Abstract: Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.Type: ApplicationFiled: February 13, 2012Publication date: August 23, 2012Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE
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Publication number: 20120213945Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.Type: ApplicationFiled: February 15, 2012Publication date: August 23, 2012Applicant: SYNOS TECHNOLOGY, INC.Inventor: Sang In LEE