Abstract: Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased.

Abstract: Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate.

Abstract: Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate.

Abstract: An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract: A plasma reactor includes a plasma generator configured to spray plasma, and an injector located adjacent to the plasma generator and configured to inject a precursor to the plasma sprayed from the plasma injector. The injector includes a platform having an opening, at least one injection hole formed in the platform to inject the precursor to the opening, and a channel formed in the platform to connect with the at least one injection hole to carry the precursor. The plasma reactor may allow supply of the plasma together with the precursor. In case corona plasma is used where a vacuum state is not needed, a wider process window may be ensured.

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.