Patents Assigned to T3Memory USA, Inc., a California US corporation
  • Patent number: 9666793
    Abstract: A planar STT-MRAM includes apparatus, made by a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current.
    Type: Grant
    Filed: December 27, 2015
    Date of Patent: May 30, 2017
    Assignee: T3Memory USA, Inc., a California US corporation
    Inventor: Yimin Guo